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Charge Carrier Generation by Exciton-Exciton Annihilation in Poly(Di-N-Hexylsilane)

Published online by Cambridge University Press:  25 February 2011

R. G. Kepler  and
Z. G. Soos
R. G. Kepler
Affiliation:
Sandia National Laboratories, Albuquerque N. M. 87185
Z. G. Soos
Affiliation:
Department of Chemistry, Princeton University, Princeton N. J. 08544
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Abstract

We have studied charge carrier generation by photons in thin films of poly(di-n-hexylsilane) over the photon energy range 3.15 to 6 eV and find that it is nonlinear in light intensity to above 4.5 eV. We show that the generation mechanism is exciton-exciton annihilation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 247: Symposium N – Electrical, Optical, and Magnetic Properties of Organic Solid State Materials , 1992 , 655
Copyright
Copyright © Materials Research Society 1992

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References

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