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Characterizing the Two-Dimensional Doping Concentration inside Silicon-Nanowires Using Scanning Spreading Resistance Microscopy

Published online by Cambridge University Press:  31 January 2011

Thomas Hantschel ,
Volker Schulz ,
Andreas Schulze ,
Esteban Angeletti ,
Firat Guder ,
Volker Schmidt ,
Stephan Senz ,
Pierre Eyben  and
Wilfried Vandervorst
Thomas Hantschel
Affiliation:
[email protected], IMEC, Kapeldreef 75, Leuven, B-3001, Belgium
Volker Schulz
Affiliation:
[email protected], IMEC, Leuven, Belgium
Andreas Schulze
Affiliation:
[email protected], IMEC, Leuven, Belgium
Esteban Angeletti
Affiliation:
[email protected], IMEC, Leuven, Belgium
Firat Guder
Affiliation:
[email protected], IMEC, Leuven, Belgium
Volker Schmidt
Affiliation:
[email protected], Max Planck Institute of Microstructure Physics, Halle, Germany
Stephan Senz
Affiliation:
[email protected], Max Planck Institute of Microstructure Physics, Halle, Germany
Pierre Eyben
Affiliation:
[email protected], IMEC, Leuven, Belgium
Wilfried Vandervorst
Affiliation:
[email protected], IMEC, Leuven, Belgium
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Abstract

The characterization of doped regions inside silicon nanowire structures poses a challenge which must be overcome if these structures are to be incorporated into future electronic devices. Precise cross-sectioning of the nanowire along its longitudinal axis is required, followed by two-dimensional electrical measurements with nanometer spatial resolution. The authors have developed an approach to cross-section silicon nanowires and to characterize them by scanning spreading resistance microscopy (SSRM). This paper describes a cleaving- and polishing-based cross-sectioning method for silicon nanowires. High resolution SSRM measurements are demonstrated for epitaxially grown and etched silicon nanowires.

Keywords

scanning probe microscopy (SPM)nanostructureelectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1178: Symposium AA – Semiconductor Nanowires–Growth, Size-Dependant Properties and Applications , 2009 , 1178-AA05-03
Copyright
Copyright © Materials Research Society 2009

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References

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