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Characterizations of Mg Implanted GaN

Published online by Cambridge University Press:  10 February 2011

Gou-Chung Chi ,
B. J. Pong ,
C. J. Pan ,
Y. C. Teng  and
C. H. Lee
Gou-Chung Chi
Affiliation:
Department of physics, National Central University, Chung-Li, Taiwan 32054
B. J. Pong
Affiliation:
Department of physics, National Central University, Chung-Li, Taiwan 32054
C. J. Pan
Affiliation:
Department of physics, National Central University, Chung-Li, Taiwan 32054
Y. C. Teng
Affiliation:
Department of physics, National Central University, Chung-Li, Taiwan 32054
C. H. Lee
Affiliation:
Department of Engineering and System Science, National Tsing Hua University, Hsinchu, Taiwan 30043
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Abstract

With 150KeV Mg+ ion implantation, the optical and structural characteristics of GaN films were studied. Post-implant annealing up to 1000°C was performed in N2 ambient with a rapid thermal annealing (RTA) system, without an encapsulation layer. We observed a green band photoluminescence from Mg-implanted GaN. This green band photoluminescence should be associated with Mg induced defect-clustering in GaN. We also use the x-ray diffraction method to study the correlation between structure defects and implantation. We observed an extra shoulder peak at the small angle side of the GaN[0004] diffraction peak. The origin of this shoulder may be attributed to implanted magnesium induced GaN lattice strain.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 1027
Copyright
Copyright © Materials Research Society 1998

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