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Characterization Techniques For Laser-Annealed Polysilicon on Insulating Layers

Published online by Cambridge University Press:  15 February 2011

J. T. Schott  and
J. J. Comer
J. T. Schott
Affiliation:
Sperry Research Center, Sudbury, Massachusetts
J. J. Comer
Affiliation:
RADC, Hanscom AFB, Massachusetts
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Abstract

Various characterization techniques are applied to pulsed and cw laser-annealed polysilicon layers deposited on oxide layers. The results are used to compare these techniques as to the type and completeness of information provided, as well as sample preparation requirements and general ease or difficulty of measurement. The techniques employed include scanning electron microscopy (SEM), electron channeling micrographs and selected area channeling patterns (SACP), reflection (high energy) electron diffraction (RHEED), transmission electron microscopy (TEM) and selected area diffraction (SAD), x-ray diffraction, optical techniques and etching techniques.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1: Symposium – Laser and Electron-Beam Solid Interactions in Materials Processing , 1980 , 479
Copyright
Copyright © Materials Research Society 1981

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References

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