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Characterization of Valence Band Offsets in P-SI/SIGE/SI by Space Charge Spectroscopy
Published online by Cambridge University Press: 21 February 2011
Abstract
A direct comparison of admittance spectroscopy and DLTS on p-type Si/Si1-xGex/Si quantum wells with x = 0.17 was performed using n+p mesa diodes. The temperature dependence of potential barriers at the QW and of the Fermi level determines the activation energy Ea of the conductance across the QW. From Ea a band offset of ΔEV = 0.16 eV was estimated. DLTS data suggest that hole emission from the QW was observed with an activation energy in correspondence with ΔEV.
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- Copyright © Materials Research Society 1994