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Characterization of Valence Band Offsets in P-SI/SIGE/SI by Space Charge Spectroscopy

Published online by Cambridge University Press:  21 February 2011

K. Schmalz ,
H. RüCker ,
I. N. Yassievich ,
H. G. Grimmeiss ,
W. Mehr ,
H. Frankenfeld ,
H. J. Osten ,
P. Schley  and
I. Babanskaya
K. Schmalz
Affiliation:
Institute of Semiconductor Physics, PF 409, D-15204 Frankfurt (Oder), Germany
H. RüCker
Affiliation:
Institute of Semiconductor Physics, PF 409, D-15204 Frankfurt (Oder), Germany
I. N. Yassievich
Affiliation:
Physico-Technical Institute, Polytechnicheskaya 26, St. Petersburg 194021, Russia
H. G. Grimmeiss
Affiliation:
University of Lund, P. O. Box 118, S-22100 Lund, Sweden
W. Mehr
Affiliation:
Institute of Semiconductor Physics, PF 409, D-15204 Frankfurt (Oder), Germany
H. Frankenfeld
Affiliation:
Institute of Semiconductor Physics, PF 409, D-15204 Frankfurt (Oder), Germany
H. J. Osten
Affiliation:
Institute of Semiconductor Physics, PF 409, D-15204 Frankfurt (Oder), Germany
P. Schley
Affiliation:
Institute of Semiconductor Physics, PF 409, D-15204 Frankfurt (Oder), Germany
I. Babanskaya
Affiliation:
Institute of Semiconductor Physics, PF 409, D-15204 Frankfurt (Oder), Germany
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Abstract

A direct comparison of admittance spectroscopy and DLTS on p-type Si/Si1-xGex/Si quantum wells with x = 0.17 was performed using n+p mesa diodes. The temperature dependence of potential barriers at the QW and of the Fermi level determines the activation energy Ea of the conductance across the QW. From Ea a band offset of ΔEV = 0.16 eV was estimated. DLTS data suggest that hole emission from the QW was observed with an activation energy in correspondence with ΔEV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 326: Symposium M – Growth, Processing, and Characterization of Semiconductor Heterostructures , 1993 , 389
Copyright
Copyright © Materials Research Society 1994

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References

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