Article contents
Characterization of Ultra-Thin PtSi Films for Infrared Detectors
Published online by Cambridge University Press: 15 February 2011
Abstract
Transmission electron microscopy and grazing incidence X-ray diffraction are used for the structural characterization of ultra-thin PtSi layers on (100) silicon prepared by a two-step rapid thermal annealing process. The roughness of the layers is investigated with atomic force microscopy. Two deposition techniques for the initial Pt layer are compared.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1996
References
- 1
- Cited by