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Characterization of Ultra High Purity Silicon Epitaxy Using Photoluminscence Spectroscopy

Published online by Cambridge University Press:  25 February 2011

J. E. Huffman ,
M. L. W. Thewalt  and
A. G. Steele
J. E. Huffman
Affiliation:
Rockwell International Science Center, 3370 Miraloma Avenue, Anaheim, CA 92803
M. L. W. Thewalt
Affiliation:
Department of Physics, Simon Fraser University, Burnaby, B.C., Canada VSA IS6
A. G. Steele
Affiliation:
Department of Physics, Simon Fraser University, Burnaby, B.C., Canada VSA IS6
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Abstract

High purity epitaxial silicon samples, grown on indium doped and on ultrahigh resistivity silicon substrates, were analyzed for impurity content using photoluminescence spectroscopy (PL) and spreading resistance analysis (SRA). Calibrated SRA indicated typical net carrier concentrations of < 3×1012cm-3 in the epitaxial layers, and about 7×1011 cm-3 in the substrates. Impurities were identified by collecting highly resolved, very clean no-phonon and TO-phonon replica PL spectra at liquid helium temperatures. Spectra were taken on the substrate material alone and on substrates with epitaxy. Ga, As, A1, B and P contamination was evident in the epitaxy. Correlation of SRA and PL results on samples with various levels of contamination at the epitaxy substrate interface identified Al as the main interfacial impurity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 90: Symposium R – Materials for Infrared Detectors and Sources , 1986 , 263
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

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