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Characterization of Transparent and Conductive ZnO:Ga Thin Films Produced by Rf Sputtering at Room Temperature

Published online by Cambridge University Press:  01 February 2011

E. Fortunato ,
V. Assunçāo ,
A. Marques ,
I. Ferreira ,
H. Águas ,
L. Pereira  and
R. Martins
E. Fortunato
Affiliation:
Materials Science Department/CENIMAT, Faculty of Sciences and Technology of New University of Lisbon, Campus da Caparica, 2829-516 Caparica, Portugal.
V. Assunçāo
Affiliation:
Materials Science Department/CENIMAT, Faculty of Sciences and Technology of New University of Lisbon, Campus da Caparica, 2829-516 Caparica, Portugal.
A. Marques
Affiliation:
Materials Science Department/CENIMAT, Faculty of Sciences and Technology of New University of Lisbon, Campus da Caparica, 2829-516 Caparica, Portugal.
I. Ferreira
Affiliation:
Materials Science Department/CENIMAT, Faculty of Sciences and Technology of New University of Lisbon, Campus da Caparica, 2829-516 Caparica, Portugal.
H. Águas
Affiliation:
Materials Science Department/CENIMAT, Faculty of Sciences and Technology of New University of Lisbon, Campus da Caparica, 2829-516 Caparica, Portugal.
L. Pereira
Affiliation:
Materials Science Department/CENIMAT, Faculty of Sciences and Technology of New University of Lisbon, Campus da Caparica, 2829-516 Caparica, Portugal.
R. Martins
Affiliation:
Materials Science Department/CENIMAT, Faculty of Sciences and Technology of New University of Lisbon, Campus da Caparica, 2829-516 Caparica, Portugal.
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Abstract

Gallium-doped zinc oxide films were prepared by rf magnetron sputtering at room temperature as a function of the substrate-target distance. The best results were obtained for a distance of 10 cm, where a resistivity as low as 2.7×10-4 Ωcm, a Hall mobility of 18 cm2/Vs and a carrier concentration of 1.3×1021 cm-3 were achieved. The films are polycrystalline presenting a strong crystallographic c-axis orientation (002) perpendicular to the substrate. The films present an overall transmittance in the visible part of the spectra of about 85 %, in average. The low resistivity, accomplished with a high growth rate deposited at RT, enables the deposition of these films onto polymeric substrates for flexible applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 763: Symposium B – Compound Semiconductor Photovoltaics , 2003 , B5.19
Copyright
Copyright © Materials Research Society 2003

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