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Characterization of thin Polymeric Nanofoam films by Transmission Electron Microscopy and Small Angle Neutron Scattering

Published online by Cambridge University Press:  10 February 2011

R. M. Briber
Affiliation:
Department of Materials and Nuclear Engineering, University of Maryland, College Park, MD 20742
J. S. Fodor
Affiliation:
Department of Materials and Nuclear Engineering, University of Maryland, College Park, MD 20742
T. P. Russell
Affiliation:
IBM Research Division, Almaden Research Center, 650 Harry Rd., San Jose, CA 95120
R. D. Miller
Affiliation:
IBM Research Division, Almaden Research Center, 650 Harry Rd., San Jose, CA 95120
K. R. Carter
Affiliation:
IBM Research Division, Almaden Research Center, 650 Harry Rd., San Jose, CA 95120
J. L. Hedrick
Affiliation:
IBM Research Division, Almaden Research Center, 650 Harry Rd., San Jose, CA 95120
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Abstract

Thin film polymer nanofoams are produced from triblock copolymers of a fluorinated polyimide, 3F/PMDA (derived from pyromelletic dianhydride (PMDA) and 1,1-bis(4-aminophenyl)-1-phenyl-2,2,2-trifluoroethane (3F)) as the center block and polypropylene oxide (PO) as the end blocks. The nanofoam is produced using a three step process: 1.) spin casting the triblock copolymer onto a silicon substrate, 2.) thermal treatment in an Argon atmosphere to imidize the center block and 3.) thermal treatment in air to degrade the PO domains and form nanoscale voids. This process was characterized using both transmission electron microscopy (TEM) and small angle neutron scattering (SANS). For the TEM studies, Ruthenium tetroxide staining was used to enhance the contrast between the polyimide (PI) matrix and the PO microdomains or voids, which permitted a more detailed view of the microstructure of both the foamed and unfoamed materials. From the two dimensional Fourier transform of the micrographs the spatial correlation between the PO microdomains in the unfoamed material and between the voids in the foam were found. An interdomain separation distance of -37 nm was observed. SANS was performed to follow the imidization and foaming processes both in-situ and on a Si substrate. The SANS results indicated that the films are homogeneous when spun from solution and that the microphase separation of the PO domains occurs during the imidization step. The subsequent foaming step leaves the morphology generally intact with the PO domains converting to voids. A peak was found in the SANS curve with a spacing of about 26 nm, which is qualitative agreement with the TEM data.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1. Carter, K. R.; Labadie, J. W.; DiPietro, , Sanchez, R. A., M. L., ; Russell, T. P.; Swanson, S. A.; Auman, B. C.; Lakshmanan, P.; McGrath, J. E. Polymer Preprints (Am. Chem. Soc., Div. Polym. Mater. Sei. Eng.) 1995, 72, 383.Google Scholar
2. Charlier, Y.; Hedrick, J. L.; Russell, T. P.; DePietro, R. Polymer Preprints (Am Chem. Soc., Div. Polym. Mater. Sci. Eng.) 1995, 72, 389.Google Scholar
3. Labadie, J. W.; Hedrick, J. L.; Wakharkar, V.; Hofer, D. C.; Russell, T. P. IEEE Trans. Compon., Hybrids, Manuf. Technol., 1992, 15, 925.Google Scholar
4. Hedrick, J. L.; Labadie, J. W.; Russell, T. P.; Hofer, D. C.; Wakharkar, V. Polymer, 1993, 34, 4717.Google Scholar
5. Tummala, R. R.; Rymaszewski, E. J. Microelectronics Packaging Handbook; Van Nostrana Reinhold: New York, 1989.Google Scholar
6. Tummala, R. R.; Keyes, R. W.; Grobman, W. D.; Kapur, S. “Thin Film Packaging”, Tummala, R. R.; Rymaszewski, E. J. eds‥ Microelectronics Packaging Handbook; Van Nostrand Reinhold: New York, 1989.Google Scholar
7. Aspnes, D. E. Thin Solid Films, 1989, 89, 249.Google Scholar
8. Prask, HJ.; Rowe, J.M; Rush, J.J.; Schroder, I.G.; J. Res. Nati. Inst. Stand. Technol., 1993, 98, 1 Google Scholar