Hostname: page-component-78c5997874-4rdpn Total loading time: 0 Render date: 2024-11-06T06:58:01.420Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization of Thin Film Dielectrics by FTIRS

Published online by Cambridge University Press:  25 February 2011

J. Neal Cox
J. Neal Cox*
Affiliation:
Components Research, Intel Corp, MS SC2-10, 3065 Bowers Av, Santa Clara, CA 95051
Get access

Abstract

The silicon-oxygen chemical bond is the key building block for many of the dielectric thin films used in silicon MOS technology. High quality thermal silicon oxides serve as gate dieletrics. CVD silicon oxides, produced by a variety of deposition processes, are used as interlayer dielectrics and as passivating layers. These films may be stoichiometric or nonstoichiometric, or doped with boron and/or phosphorus to provide the most desirable film properties.

Bandshape analysis of the Fourier Transform Infrared (FTIR) spectra of these films can provide information on the chemical bond strength, the homogeneity, and the optical dielectric function of various glasses. Spectral features are found to change characteristically, depending upon deposition conditions, subsequent processing (densification), the influence of dopants, stress, and the effects of overlying films. In comparing films [Bposited under different conditions, the primary Si-O stretching mode peak position shifts over a 30cm-1 range and has a FWHM that varies by as much as 50%. The FTIR technique can routinely resolve peak shifts in glasses as small as 2 cm-1, sufficient to detect the differences observed due to deposition or processing.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 69: Symposium D – Materials Characterization , 1986 , 219
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Pliskin, W.A., J. Vac. Sci. and Technol. 14 (5), 1064 (1977).Google Scholar
2. Tenney, A.S. and Wong, J., J. Chem. Phys. 56 (11), 5516 (1972).CrossRefGoogle Scholar
3. Tenney, A.S. and Ghezzo, M., J. Electrochem. Soc.: Solid State Science and Technology 120 (9), 1276 (1973).Google Scholar
4. Werner Kern and Heim, R.C., J. Electrochem. Soc.: Electrochem. Technol. 117 (4), 568 (1970).Google Scholar
5. Sugano, Takuo, Thin Solid Films 92, 19 (1982).Google Scholar
6. Ferraro, J.R., Vibrational Spectroscopy at High Pressures, (Academic Press, New York, 1984) pp. 102–105.Google Scholar
7. Ferraro, J.R., Manghnani, M.H., and Quattrochi, A., Physics and Chemistry of Glasses 13 (4), 116 (1972).Google Scholar
8. Helms, C.R., presented at Symposium on Interconnect, Gate, and Dielectric Materials, University of Santa Clara, October, 1984.Google Scholar
9. Yin, M.T. and Cohen, M.L., Phys. Rev. Lett. 45 (12), 1004 (1980).Google Scholar