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Characterization of Thermal Annealed Bi Implanted Silica

Published online by Cambridge University Press:  25 February 2011

S. H. Morgan ,
D. O. Henderson ,
Z. Pan ,
R. H. Magruder III  and
R. A. Zuhr
S. H. Morgan
Affiliation:
Physics Department, Fisk University, Nashville, TN 37208
D. O. Henderson
Affiliation:
Physics Department, Fisk University, Nashville, TN 37208
Z. Pan
Affiliation:
Solid State Division, Oak Ridge National Lab, Oak Ridge, TN 37831
R. H. Magruder III
Affiliation:
Physics Department, Belmont University, Nashville, TN 37212
R. A. Zuhr
Affiliation:
Physics Department, Fisk University, Nashville, TN 37208
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Abstract

Optical and infrared reflection spectra for Bi implanted silica are reported as a function of dose and thermal annealing. A series of high purity silica samples were implanted with Bi ions at an energy of 350 KeV. Doses were 1 × 1016 and 1.0 × 1017ions/cm2 at 5μamps/cm2. The samples were subsequently thermally annealed at 400, 600 and 800 C. The optical absorption from 6.2 to 1.8 eV and infrared reflectance from 5000 to 450 cm”−1 were measured before and after annealing. Effects of thermal annealing are strongly dependent on Bi content.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 327
Copyright
Copyright © Materials Research Society 1993

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