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Characterization of the ZnSe/GaAs Interface Layer by Tem and Spectroscopic Ellipsometry
Published online by Cambridge University Press: 25 February 2011
Abstract
The interface between ZnSe thin films and GaAs substrates is characterized by High Resolution Transmission Electron Microscopy and room temperature Spectroscopic Ellipsometry. The films were grown on (001) GaAs by Molecular Beam Epitaxy. A three-phase model is used in the reduction of the ellipsometric data, from which the presence of a transition layer of Ga2Se3, with a thickness of less than 1 nm, is confirmed. These results corroborate the high resolution transmission electron microscopy images obtained from the same samples.
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- Copyright © Materials Research Society 1993