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Characterization of Tetrahedrally Bonded Amorphous Carbon Via Capacitance Techniques

Published online by Cambridge University Press:  10 February 2011

Kimon C. Palinginis ,
A. Ilie ,
B. Kleinsorge ,
W.I. Milne  and
J. D. Cohen
Kimon C. Palinginis
Affiliation:
Department of Physics, University of Oregon, Eugene, OR 97403, U.S.A.
A. Ilie
Affiliation:
Engineering Department, University of Cambridge CB2 1PZ, U.K.
B. Kleinsorge
Affiliation:
Engineering Department, University of Cambridge CB2 1PZ, U.K.
W.I. Milne
Affiliation:
Engineering Department, University of Cambridge CB2 1PZ, U.K.
J. D. Cohen
Affiliation:
Department of Physics, University of Oregon, Eugene, OR 97403, U.S.A.
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Abstract

We report the results of junction capacitance measurements on thin tetrahedral amorphous carbon (ta-C) films to deduce their defect densities. We find defect densities in the range 3 - 7 × 1017 cm−3 in the undoped ta-C films, and roughly an order of magnitude larger in the nitrogen doped (n-type) films. In some cases fairly uniform defect profiles were obtained covering a thickness of a couple of hundreds angstroems. We also observed a thermal activation process of carriers from defect states at the ta-C/c-Si interface with an activation energy in the range of 0.4eV to 0.5eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 509: Symposium C – Materials Issues in Vacuum Microelectronics , 1998 , 119
Copyright
Copyright © Materials Research Society 1998

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References

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