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Characterization of Temporary Extrusion Failures in Quarter-Micron Copper Interconnects

Published online by Cambridge University Press:  01 February 2011

Yan Zhang
Affiliation:
School of Engineering
Junho Choy
Affiliation:
Department of Physics, Simon Fraser University, Burnaby, BC, V5H 3H3, Canada.
Glenn H. Chapman
Affiliation:
School of Engineering
Karen L. Kavanagh
Affiliation:
Department of Physics, Simon Fraser University, Burnaby, BC, V5H 3H3, Canada.
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Abstract

We report an unusual circuit failure mode induced by short-lived extrusions observed during DC and AC electromigration (EM) tests of quarter-micron damascene copper interconnects. This novel “soft” failure mode consists of extrusions forming, then self-dissolving before the traditional permanent void or extrusion failure. These failures shorten the lifetime significantly and bring new challenges to reliability tests. Two self-dissolution mechanisms under DC test conditions are discussed and extrusion shape evolution is modeled assuming both capillary and electron wind forces are present. Our model confirms that the electrical stress will accelerate the shape evolution process.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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References

1. Lloyd, J. R., “Electromigration in Integrated Circuit Conductors,” J. Phys. D: 32 (1999) pp.109118.Google Scholar
2. Tsai, M. H., Tsai, W. J., Shue, S. L., Yu, C. H., and Liang, M. S., “Reliability of Dual Damascene Cu Metallization,” Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000, pp. 214216.Google Scholar
3. Kuo, Y. and Lee, S., “Room-temperature Copper Etching Based on a Plasma-Copper Reaction,” Appl. Phys. Lett., 78 (7) 2001, pp.10021004 Google Scholar
4. Hu, C. K., Rosenberg, R. and Lee, K. L., “Electromigration Path in Cu Thin-film Lines,” Appl. Phys. Lett., 74, 2945 (1999)Google Scholar
5. Lane, M. W., Liniger, E. G. and Lloyd, J. R., “Relationship between Interfacial Adhesion and Electromigration in Cu Metallization,” J. Appl. Phys., 93, 1417 (2003).Google Scholar
6. Kim, J.W., Song, W.S., Kim, S.Y., Kim, H.S., Jeon, H.G. and Lim, C.B., “Characterization of Cu Extrusion Failure Mode in Dual-Damascene Cu/low-k Interconnects under Electromigration Reliability Test,” Proc. of 8th IPFA 2001, Singapore, pp. 175177.Google Scholar
7. Lee, K. D., Lu, X., Ogawa, E. T., Matsuhashi, H., and Ho, P. S., “Electromigration Study of Cu/low k Dual-damascene Interconnects,” Reliability Physics Symposium Proceedings, 2002, pp.322326 Google Scholar
8. Ryu, C., Kwon, K.W., Loke, Alvin L. S., Lee, H., Nogami, T., Dubin, V. M., Kavari, R. A., Ray, G. W. and Wong, S. S., “Microstructure and Reliability of Copper Interconnects”, IEEE Transcation on Electron Devices, Vol. 46 (6), 1113 (1999).Google Scholar
9. Tu, K. N., “Recent Advances on Electromigration in Very-Large-Scale-Integration of Interconnects,” J. Appl. Phys. Vol 94 (9)., 5451 (2003).Google Scholar
10. Choy, J. H. and Kavanagh, K. L., “Effects of Capillary Forces on Copper/Dielectric Interfacial Void Evolution,” Appl. Phys. Letts., Vol. 84, 2004, pp. 52015203.Google Scholar