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Characterization of Sputtered Cerium Dioxide Thin Films

Published online by Cambridge University Press:  21 February 2011

Shuwenguo S. N. Jacobsen
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
U. Helmersson
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
K. Järrendahl
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
L. D. Madsen
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
P. Tengvall
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
H. Arwin
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
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Abstract

Thin films of CeO2 deposited by rf magnetron sputtering on sapphire and silicon substrates have been characterized with variable angle spectroscopie ellipsometry, atomic force microscopy (AFM), transmission electron microscopy and x-ray diffraction. A novel multiple model was used successfully for determination of the optical properties and surface roughness of the CeO2films. AFM analysis showed that the CeO2 films have hillock-shaped facet morphology. It was found that the surface roughness of CeO2 increased with film thickness. For films on sapphire substrates, the surface morphology and the crystalline quality were improved by post-annealing, e.g. flat surfaces were obtained after annealing at 1100 °C.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1. Sundar, K. B. and Wahid, P., Thin Solid Films 221, 13 (1992).Google Scholar
2. Netterfield, R. P., Sainty, W. G., Martin, P. J., and Sie, S. H., Appl. Opt. 24, 2267 (1985).Google Scholar
3. Frangoul, A. G., Sundaram, K. B., and Wahid, P., J. Vac. Sci. Technol. B9, 181 (1991).Google Scholar
4. Al-Dhhan, Z. T. and Hogarth, C. A., J. Mater. Sci. 23, 2205 (1988).Google Scholar
5. Zheng, S.-Y., Andersson-Fäldt, A. M., Stjerna, B., and Granqvist, C. G., Appl. Opt. 32, 6303 (1993).Google Scholar
6. Beie, H.-J. and Gnörich, A., Sensors and Actuators B4, 393 (1991).Google Scholar
7. Schwab, R. G., Steiner, R. A., Mages, G., and Beie, H.-J., Thin Solid Films 207, 288 (1992).Google Scholar
8. Guo, S., Arwin, H., Jacobsen, S. N., Jàrrendahl, K., and Helmersson, U., Submitted to J. Appl. Phys.Google Scholar
9. Selinder, T. I., Helmersson, U., Han, Z., and Wallenberg, L. R., Thin Solid Films 229, 237 (1993).Google Scholar
10. Weaver, L., Linköping University Report No. R-209, p. 20 (1994).Google Scholar
11. Woollam, J. A. and Snyder, P., Mat. Sci. Eng. B5, 279 (1990).Google Scholar
12. Aspnes, D. E., Theeten, J. B., and Hottier, F., Phys. Rev. B20, 3292 (1979).Google Scholar
13. Aspnes, D. E. and Studna, A. A., J. Vac. Sci. Technol. 20, 488 (1982).Google Scholar