Hostname: page-component-cd9895bd7-jn8rn Total loading time: 0 Render date: 2024-12-27T01:30:41.576Z Has data issue: false hasContentIssue false

Characterization of Sputtered Barium Ferrite Thin Films on Silicon Nitride Coated Carbon Substrates

Published online by Cambridge University Press:  15 February 2011

Jinshan Li
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA94305
Robert Sinclair
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA94305
Stephen S. Rosenblum
Affiliation:
Applied Electronics Center, Kobe Steel USA Inc., Palo Alto, CA94304
Hidetaka Hayashi
Affiliation:
Applied Electronics Center, Kobe Steel USA Inc., Palo Alto, CA94304
Get access

Abstract

Using facing target sputtering, randomly oriented crystalline barium ferrite(BaFe12O19, BaM) has been deposited onto a Ultra Densified Amorphous Carbon® (UDAC) substrate, producing high quality films in-situ at a substrate temperature of 6400°C without any post-deposition annealing. Cross section transmission electron microscopy (TEM) reveals that the films have columnar structure. A ˜100Å thick interdiffusion layer between BaM and silicon nitride underlayer was observed. Films grown at low oxygen partial pressure have lower saturation magnetization (Ms), that may be caused by the formation of some amorphous phase at the grain boundaries as noticed by plan-view TEM. The existence of the Fe2O3 phase in the BaM was also revealed by electron diffraction.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Speliotis, D. E., J. Appl. Phys. 67, 5358, (1990).CrossRefGoogle Scholar
2 Kodama, N., Inoue, H., Spratt, G. and Uesaka, Y., J. Appl. Phys. 69, 4490 (1991).Google Scholar
3 Rosenblum, S. S., Hayashi, H., Li, J. and Sinclair, R., IEEE Trans. Magn. (1994), in press.Google Scholar
4 Li, J., Giir, T., Sinclair, R., Rosenblum, S. S. and Hayashi, H., J. Mater. Res., (1994), in press.Google Scholar
5 Bravman, J. and Sinclair, R., J. Electron Microscopy Technique, vol.1, 53 (1984).Google Scholar
6. Naoe, M., Hasunuma, S., Hoshi, Y. and Yamanaka, S., IEEE Trans. Magn. vol.17, 3184 (1981).CrossRefGoogle Scholar
7. Lacroix, E., Gerard, P., Marest, G. and Dupuy, M., J. Appl. Phys. 69, 4770 (1991).Google Scholar