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Characterization of Sputter Deposited PbTe on Si (111) for Optoelectronic Applications

Published online by Cambridge University Press:  11 February 2011

Alexey Jdanov ,
Zinovi Dashevsky ,
Joshua Pelleg  and
Roni Shneck
Alexey Jdanov
Affiliation:
Department of Materials Engineering, Ben Gurion University of the Negev, Beer Sheva, 84105, Israel
Zinovi Dashevsky
Affiliation:
Department of Materials Engineering, Ben Gurion University of the Negev, Beer Sheva, 84105, Israel
Joshua Pelleg
Affiliation:
Department of Materials Engineering, Ben Gurion University of the Negev, Beer Sheva, 84105, Israel
Roni Shneck
Affiliation:
Department of Materials Engineering, Ben Gurion University of the Negev, Beer Sheva, 84105, Israel
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Abstract

IV-VI compound semiconductors are of interest due to their potential application as thermoelectric material, infrared detectors and semiconductor lasers. The use of PbTe based semiconductors is usually in the middle and far infrared region. Magnetron sputtering of PbTe thin films from a single target on Si (111) was performed under various conditions. Characterization of the films shows that PbTe films on Si (111) substrate are suitable for preparation of infrared (IR) detectors. By heat treatment novel IR detectors can be developed in the electron absorption region of 4 – 10 μm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 744: Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications , 2002 , M5.29
Copyright
Copyright © Materials Research Society 2003

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References

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