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Characterization of Silicon and Indium Redistribution in InxGa1−xAs/n+-GaAs(100) Heteroepitaxial Layers Fabricated Using Pulsed Laser Melting

Published online by Cambridge University Press:  21 February 2011

Y. Chang ,
T.W. Sigmon ,
A.F. Marshall  and
K.H. Weiner
Y. Chang
Affiliation:
Solid State Laboratory and Department of Electrical Engineering, Stanford University, Stanford, CA 94305
T.W. Sigmon
Affiliation:
Solid State Laboratory and Department of Electrical Engineering, Stanford University, Stanford, CA 94305
A.F. Marshall
Affiliation:
Center for Materials Research, Stanford University, Stanford, CA 94305
K.H. Weiner
Affiliation:
Lawerence Livermore National Laboratory, Livermore,CA 94550
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Abstract

Heteroepitaxial InxGa1−xAs/GaAs structures have been formed by pulsed laser induced mixing of molecular beam deposited In films (˜200Å) on Si doped n+-GaAs (100) substrates. The Si dopant and deposited In are redistributed in a rapid melt-solidification process driven by a XeCl pulsed excimer laser. It is found, from high resolution cross-sectional transmission electron microscopy, that the epitaxial layers are crystalline and lattice matched to the substrate except for the misfit dislocations lying along the InxGa1−xAs/GaAs interface. These interfacial dislocations are used to identify the laser melted and unmelted regions. The dip and pile-up regions in the Si SIMS profiles are attributed to a segregation effect. Numerical simulation based on the liquid-solid interface velocity dependent segregation coefficient is used to investigate this effect and has approximated the trends in the measured characteristic In and Si profiles.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 187: Symposium J – Thin Film Structures and Phase Stability , 1990 , 119
Copyright
Copyright © Materials Research Society 1990

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References

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