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Characterization Of SiC Films Deposited By Laser Ablation Technique For X-Ray Membranes

Published online by Cambridge University Press:  15 February 2011

M.A. El Khakani ,
M. Chaker ,
S. Boily ,
A. Papadopoullos ,
Y. Huai  and
A. Jean
M.A. El Khakani
Affiliation:
INRS-Energie et Matériaux, C.P. 1020, Varennes, Québec, Canada J3X 1S2
M. Chaker
Affiliation:
INRS-Energie et Matériaux, C.P. 1020, Varennes, Québec, Canada J3X 1S2
S. Boily
Affiliation:
INRS-Energie et Matériaux, C.P. 1020, Varennes, Québec, Canada J3X 1S2
A. Papadopoullos
Affiliation:
INRS-Energie et Matériaux, C.P. 1020, Varennes, Québec, Canada J3X 1S2
Y. Huai
Affiliation:
INRS-Energie et Matériaux, C.P. 1020, Varennes, Québec, Canada J3X 1S2
A. Jean
Affiliation:
INRS-Energie et Matériaux, C.P. 1020, Varennes, Québec, Canada J3X 1S2
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Abstract

Laser Ablation Deposition (LAD) technique was used to produce hydrogen-free SiC films on (100) Si substrate. Deposition temperatures of 300°C and 450°C were investigated. The Si2p and C1s. core levels and the Si-C absorption band of the a-SiC LAD films were characterized by using X-ray Photoelectron Spectroscopy (XPS) and Fourier-Transform Infra Red (FTIR) absorption spectroscopy, respectively. The high compressive stress of the as-deposited SiC films was released and controlled by means of rapid thermal annealing. A correlation between the stress evolution and the Si-C bond density of the annealed films is pointed out. Optical transmission and mechanical properties (stress, Young's modulus) measurements were carried out on the free-standing membranes fabricated from SiC LAD films. The effect of the deposition temperature on the SiC membrane properties is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 306: Symposium K – Materials Aspects of X-Ray Lithography , 1993 , 211
Copyright
Copyright © Materials Research Society 1993

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