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Characterization of Semi-insulating SiC

Published online by Cambridge University Press:  01 February 2011

Nguyen Tien Son ,
Patrick Carlsson ,
Björn Magnusson  and
Erik Janzén
Nguyen Tien Son
Affiliation:
[email protected], Linköping University, Department of Physics, Chemistry and Biology, SE-581 83 Linköping, Linköping, N/A, 581 83, Sweden, +46-13-282531, +46-13-142337
Patrick Carlsson
Affiliation:
[email protected], Linköping University, Department of Physics, Chemistry and Biology, Linköping, N/A, SE-581 83, Sweden
Björn Magnusson
Affiliation:
[email protected], Linköping University, Department of Physics, Chemistry and Biology, Linköping, N/A, SE-581 83, Sweden
Erik Janzén
Affiliation:
[email protected], Linköping University, Department of Physics, Chemistry and Biology, Linköping, N/A, SE-581 83, Sweden
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Abstract

Electron paramagnetic resonance was used to study defects in high-purity semi-insulating (HPSI) substrates grown by high-temperature chemical vapor deposition and physical vapor transport. Deep level defects associated to different thermal activation energies of the resistivity ranging from ~0.6 eV to ~1.6 eV in HPSI substrates are identified and their roles in carrier compensation processes are discussed. Based on the results obtained in HPSI materials, we discuss the carrier compensation processes in vanadium-doped SI SiC substrates and different activation energies in the material.

Keywords

defectselectron spin resonanceV
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 911: Symposium B – Silicon Carbide 2006 – Materials, Processing and Devices , 2006 , 0911-B06-03
Copyright
Copyright © Materials Research Society 2006

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