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Characterization of Rapid Thermally Nitrided Titanium Films Contacting Silicided and Non-Silicided Junctions

Published online by Cambridge University Press:  25 February 2011

S. Chittipeddi ,
M. J. Kelly ,
C. M. Dziuba ,
R. B. Irwin ,
P. M. Kahora ,
V. C. Kaiman  and
W. T. Cochran
S. Chittipeddi
Affiliation:
AT&T Bell Labs AHentown, PA 18103.
M. J. Kelly
Affiliation:
AT&T Bell Labs AHentown, PA 18103.
C. M. Dziuba
Affiliation:
AT&T Bell Labs AHentown, PA 18103.
R. B. Irwin
Affiliation:
AT&T Bell Labs AHentown, PA 18103.
P. M. Kahora
Affiliation:
AT&T Bell Labs AHentown, PA 18103.
V. C. Kaiman
Affiliation:
AT&T Bell Labs AHentown, PA 18103.
W. T. Cochran
Affiliation:
AT&T Bell Labs AHentown, PA 18103.
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Abstract

In the present work we have studied rapid thermally nitrided titanium films which contact self-aligned silicided titanium disilicide (TiSi2-salicided) and non-silicided junctions. We correlate electrical contact resistance data to SIMS results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 387
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

[1] Ting, C. Y., Iyer, S. S., Osburn, C. M., Hu, G. J., and Scheiwgart, A. M., in Proc. of First Int. Symp. on VLSI Sci. and Technol. (Electrochemical Society, New York 1982), pp. 224 and references therein.Google Scholar
[2] Kannmori, S., Thin Solid Films, 136, pp. 195–214 (1986).Google Scholar
[3] Tang, T., Wei, C. C., Haken, R., Holloway, T., Wan, C. F., and Douglas, M., IEDM Tech. Digest, pp. 590 (1985).Google Scholar
[4] Ho, Y. Q., J. Vac. Sci. Technol., 135 pp. 164 (1987).Google Scholar
[5] Chittipeddi, S., Kelly, M. J., Dziuba, C. M., Oates, A. J., and Cochran, W. T., Mat. Res. Soc. Proc. Symp., 181, pp. 527 (1990).Google Scholar
[6] Beyers, R. and Sinclair, R., J. Appl. Phys., 57, pp. 5240 (1984).Google Scholar
[7] Cochran, Bill, Semiconductor International, pp. 146–148 (1991).Google Scholar
[8] Key, R. W. in private communications.Google Scholar
[9] Chittipeddi, S., Irwin, R. B. in private communications.Google Scholar