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Characterization of Rapid Nitrided Ultrathin SiO2 Films By XPS and SCS

Published online by Cambridge University Press:  15 February 2011

H. Yan ,
S. P. Wong ,
R. W. M. Chan ,
R. W. M. Kwok  and
W. X. Feng
H. Yan
Affiliation:
Department of Electronic Engineering, The Chinese University of Hong Kong, Hong Kong.
S. P. Wong
Affiliation:
Department of Electronic Engineering, The Chinese University of Hong Kong, Hong Kong.
R. W. M. Chan
Affiliation:
Department of Chemistry, The Chinese University of Hong Kong, Hong Kong.
R. W. M. Kwok
Affiliation:
Department of Chemistry, The Chinese University of Hong Kong, Hong Kong.
W. X. Feng
Affiliation:
Department of Applied Physics, South China University of Technology, China.
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Abstract

Ultrathin SiO2 dielectric layers of thickness less than 100Å on silicon substrates have been prepared by dry oxidation and rapid thermal nitirdation (RTN). In this study, X-ray photoelectron spectroscopy and surface charge spectroscopy had been applied to study the nitrogen distribution in the dielectric layers and the change in the interface state density (Dit) due to the nitrogen incorporation. It is found that most of the incorporated nitrogen is located near the dielectric/Si interface and the nitrogen content increases with the RTN temperature. For the electrical properties, we found that the Dit, after RTN slightly decreases and the breakdown field strength deduced from the dielectric surface potential was enhanced by the incorporation of nitrogen.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 387: Symposium P – Rapid Thermal and Integrated Processing IV , 1995 , 247
Copyright
Copyright © Materials Research Society 1995

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