Hostname: page-component-6bf8c574d5-9nwgx Total loading time: 0 Render date: 2025-02-20T14:39:35.352Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization of Pulsed Supersonic Cvd System For Diamond Growth

Published online by Cambridge University Press:  22 February 2011

Douglas A. A. Ohlberg ,
James Ren  and
R.Stanley Williams
Douglas A. A. Ohlberg
Affiliation:
Department of Chemistry and Biochemistry and Solid State Science Center University of California Los Angeles, Los Angeles, CA 90024-1569
James Ren
Affiliation:
Department of Chemistry and Biochemistry and Solid State Science Center University of California Los Angeles, Los Angeles, CA 90024-1569
R.Stanley Williams
Affiliation:
Department of Chemistry and Biochemistry and Solid State Science Center University of California Los Angeles, Los Angeles, CA 90024-1569
Get access

Abstract

An ultra-high vacuum chemical vapor deposition system using pulsed, supersonic jets of halogenated hydrocarbon precursors has been constructed with the intention of growing diamond thin films. Experimental results from this system should determine whether the hyperthermal activation of precursors improves the carbon incorporation efficiency of film growth. The jets, produced by commercially available pulsed valves, were characterized with a fast ionization gauge. Parameters such as valve backing pressure and the pulse width were varied to optimize material flux and avoid the formation of boundary layers above the substrate that could reduce the kinetic energy of the precursors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 349: Symposium T – Novel Forms of Carbon II , 1994 , 433
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Zhang, S., Cui, J., Tanaka, A., and Aoyagi, Y. (to be published).Google Scholar
2. Eres, D., Lowndes, D., Tischler, J., Sharp, J., and Haynes, T., J. Appl. Phys. 67 (3), 1361 (1990).Google Scholar
3. Engstrom, J., Furjanic, M., and Hansen, D., Appl. Phys. Lett. 63 (13), 1821 (1993).Google Scholar
4. Lee, M. B., Yang, Q. Y., and Ceyer, S. T., J. Chem. Phys. 87, 2724 (1987).Google Scholar
5. Sprang, H., Busmann, H., Lauer, S., and Hertel, I. V., Appl. Phys. A55, 347 (1992).Google Scholar
6. Williams, R. S., in Low-Energy Ion-Surface Interactions, edited by Rabalais, J. W. (John Wiley & Sons Ltd., New York, 1994), currently in printing.Google Scholar
7. Anderson, J. B., Andres, R. P., and Fenn, J. B., Adv. Chem. Phys. 10, 275 (1966).Google Scholar
8. Beam Dynamics, Inc., Minneapolis, Minnesota.Google Scholar
9. General Valve Corporation, Fairfield, New Jersey.Google Scholar
10. Bernstein, R. B., Chemical Dynamics via Molecular Beam and Laser Techniques (Oxford Univ. Press, New York, 1982), Sec. 3.3.Google Scholar
11. Curtiss, T., PhD Thesis, University of California Los Angeles (1990).Google Scholar