Hostname: page-component-586b7cd67f-2brh9 Total loading time: 0 Render date: 2024-11-25T17:54:35.593Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization of Pulsed Laser Beam Mixed AuTe/GaAs Ohmic Contacts

Published online by Cambridge University Press:  25 February 2011

K. Wuyts ,
R.E. Silverans ,
M. Van Hove  and
Van Rossum Van Hove
K. Wuyts
Affiliation:
Physics Department, K.U.Leuven, Celestijnenlaan 200D, B—3030 Leuven, Belgium
R.E. Silverans
Affiliation:
Physics Department, K.U.Leuven, Celestijnenlaan 200D, B—3030 Leuven, Belgium
M. Van Hove
Affiliation:
Imec, Kapeldreef 75, B—3030 Leuven, Belgium
Van Rossum Van Hove
Affiliation:
Imec, Kapeldreef 75, B—3030 Leuven, Belgium
Get access

Abstract

The formation of pulsed laser processed AuTe/n—GaAs ohmic contacts was investigated using I—V measurements, Rutherford Backscattering, and Mössbauer spectroscopy. Ohmic contact resistances comparable to those of furnace processed AuTe and AuGe/GaAs contacts were measured; however, a much thinner intermixed layer was obtained by the laser processing. No evidence for the formation of a n++—GaAs layer could be derived from the experimental data. The results are more consistent with the model explaining the ohmic conduction mechanism by the formation of a graded heterojunction structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 157: Symposium A – Beam-Solid Interactions: Physical Phenomena , 1989 , 413
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Zhang, T., Sigmon, T.W., Weiner, K.H. and Carey, P.G., Appl. Phys. Lett. 55(6), 580, (1989)Google Scholar
2 Imanaga, S., Kawai, H., Kajiwara, K., Kaneko, K. and Watanabe, N., J. Appl. Phys. 62(6), 2381 (1989)Google Scholar
3 Baeri, P., Phys. Script. T29, 183 (1989)Google Scholar
4 Sebestyen, T., Sol. Stat. Electr. 25(7), 543 (1982)Google Scholar
5 Rhoderick, E.H. and Williams, R.H., Metal—Semiconductor contacts, 2nd ed. (Clarendon Press, Oxford, 1988), p.204 Google Scholar
6 Wuyts, K., Vantomme, A., Silverans, R.E., Van Hove, M. and Van Rossum, M., in Advances in Materials. Processing and Devices in III—V Compound Semiconductors, edited by Sadana, D.K., Eastman, L., and Dupuis, R. (Mater. Res. Soc. Proc. 144, Pittsburgh, PA 1989) pp545–550 Google Scholar
7 Doolittle, L.R., Nucl. Instrum. Meth B9, 344 (1985)Google Scholar
8 Wuyts, K., Langouche, G. and Silverans, R.E., Hyp. Int. (in press)Google Scholar
9 Langouche, G., Bemelmans, H., Odeurs, J., Borghs, G., de Potter, M., Deraedt, W. and Van Rossum, M., Mat. Sci. For. 38–41. 1245 (1989) and G. Langouche, H. Bemelmans (private communication)Google Scholar
10 Wuyts, K., Langouche, G., Vanderstraeten, H., Silverans, R.E., Van Hove, M., Van Rossum, M., Münder, H. and Lüth, H., 1990 MRS Spring Meeting, San Francisco, CA, 1990 Google Scholar
11 Kirillov, D., and Chung, Y., Appl. Phys. Lett. 51(11), 846 (1987)Google Scholar