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Characterization of Precipitates Decorating Stacking Faults in Single Crystal Silicon

Published online by Cambridge University Press:  25 February 2011

K. Ryoo ,
R. Drosd  and
W. E. Wood
K. Ryoo
Affiliation:
Oregon Graduate Center, 19600 N.W. Von Neumann Drive, Beaverton, OR 97006-1999
R. Drosd
Affiliation:
Tektronix, Inc., P.O. Box 500, Beaverton, OR 97005
W. E. Wood
Affiliation:
Oregon Graduate Center, 19600 N.W. Von Neumann Drive, Beaverton, OR 97006-1999
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Abstract

Oxidation of silicon wafers containing lattice damage at the surface normally results in the formation of extrinsic stacking faults. Optical microscope investigation following decorative etching shows that on certain samples the faults have a straight line appearance while on others the ends of the defect are much enlarged giving a “dog-bone” shape. TEM investigation confirmed that the dog-bone shaped faults were decorated with colonies of precipitates near their edges. These colonies resided on the (111) fault planes and extended over several thousand angstroms. Precipitate spots were not found in the diffraction pattern due to the small volume fraction, but translational Moire fringes were observed for certain matrix g-vectors, thus aiding in the crystallographic analysis. EDX analysis was also performed and revealed that precipitates were due to Cu and Ni contamination. The electrical impact of the defects on P-N junction was measured, showing a strong influence on both reverse and forward bias current/ voltage characteristics.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 62: Symposium Q – Materials Problem Solving with the Transmission Electron Microscope , 1985 , 17
Copyright
Copyright © Materials Research Society 1986

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References

1. Zulehner, W. and Huber, D., Czochralski-Grown Silicon, (Springer-Verlag Berlin, Heidelberg), Crystals 8 (1982).Google Scholar
2. Jenkins, M. Wright, J. Electrochem. Soc., 124, 1757 (1977).Google Scholar
3. Zaluzec, N. J., Bulletin of the EMSA, 15 (1) 67 (1985).Google Scholar
4. Spence, J. C. H., Experimental High-Resolution Electron Microscopy, (Claren Press, Oxford, New York, 1981).Google Scholar
5. Nes, E. and Washburn, J., J. Appl. Phys., 44, 3682 (1973).Google Scholar
6. Das, G., J. Appl. Phys., 44, 4459 (1973).Google Scholar
7. Lunnon, M., Allison, D. F. and Stacy, W. T., Defects in Silicon, Pro. Electrochem. Soc.,463 (1983).Google Scholar
8. Stacy, W. T., Allison, D. F., and Wu, T. C., Semiconductor Silicon, Pro. Electrochem. Soc., 344 (1981).Google Scholar
9. Lin, P. S. D., Marcus, R. B., and Sheng, T. T., J. Electrochem. Soc., 130 (9), 1878 (1983).Google Scholar
10. Ottaviani, G., MRS Symp. Proc., 25, 21 (1984).Google Scholar
11. Gibson, J. M., Tung, R. T., Phillips, J. M., and.Poate, J. M., MRS Symp. Proc., 25, 405 (1984).Google Scholar