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Characterization of Porous Silicon Layers by Reflectance Spectroscopy

Published online by Cambridge University Press:  28 February 2011

W. Theiβ ,
P. Grosse ,
H. Münder ,
H. Lüth ,
R. Herino  and
M. Ligeon
W. Theiβ
Affiliation:
I. Phys. Inst, Aachen Technical University, Germany
P. Grosse
Affiliation:
I. Phys. Inst, Aachen Technical University, Germany
H. Münder
Affiliation:
Institut für Schicht- und Ionentechnik (ISI), Forschungszentrum Jülich, Germany
H. Lüth
Affiliation:
Institut für Schicht- und Ionentechnik (ISI), Forschungszentrum Jülich, Germany
R. Herino
Affiliation:
Laboratoire Spectrométrie Physique, Université Joseph-Fourier, Grenoble, France
M. Ligeon
Affiliation:
Laboratoire Spectrométrie Physique, Université Joseph-Fourier, Grenoble, France
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Abstract

The characterization of porous silicon layers by optical reflectance spectroscopy in the infrared, visible and UV is presented. A fit of simulated to measured spectra is used to interprete the experimental results. We stress that the microgeometry of the porous system determines the optical properties to a large extent and must be taken into account in a correct way in order to achieve reliable results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 215
Copyright
Copyright © Materials Research Society 1993

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