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Characterization of Polysilicon Films by Raman Spectroscopy and Transmission Electron Microscopy: a Comparative Study*

Published online by Cambridge University Press:  22 February 2011

David R. Tallant ,
Thomas J. Headley ,
John W. Medernach  and
Franz Geyling
David R. Tallant
Affiliation:
Sandia National Laboratories, Albuquerque, NM;
Thomas J. Headley
Affiliation:
Sandia National Laboratories, Albuquerque, NM;
John W. Medernach
Affiliation:
Sandia National Laboratories, Albuquerque, NM;
Franz Geyling
Affiliation:
SEMATECH, Austin, TX
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Abstract

Samples of chemically-vapor-deposited sub-micrometer-thick films of polysilicon were analyzed by transmission electron microscopy (TEM) in cross-section and by Raman spectroscopy with illumination at their surface. TEM and Raman spectroscopy both find varying amounts of polycrystalline and amorphous silicon in the wafers. Raman spectra obtained using blue, green and red excitation wavelengths to vary the Raman sampling depth are compared with TEM crosssections of these films. Some films have Raman spectra with a band near 497 cm−1, corresponding to numerous nanometer-scale faulted regions in the TEM micrographs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 324: Symposium K – Diagnostic Techniques for Semiconductor Materials Processing , 1993 , 255
Copyright
Copyright © Materials Research Society 1994

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Footnotes

*

This work was performed at Sandia National Laboratories, which is operated for the U.S. Department of Energy under contract number DE-AC04-94AL85000, and at the Semiconductor Equipment Technology Center (SETEC) of Sandia National Laboratories, Albuquerque, New Mexico 87185 and Livermore, California 94550 for SEMATECH under CRADA SC92-1082.

References

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