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Characterization of Polycrystalline Silicon Grown by Gas-Assisted-Solidification

Published online by Cambridge University Press:  28 February 2011

H. L. Hwang ,
M. H. Yang ,
T. H. Hseu  and
C. H. Chu
H. L. Hwang
Affiliation:
National Tsing Hua University Hsin-chu, Taiwan, R.O.C.
M. H. Yang
Affiliation:
National Tsing Hua University Hsin-chu, Taiwan, R.O.C.
T. H. Hseu
Affiliation:
National Tsing Hua University Hsin-chu, Taiwan, R.O.C.
C. H. Chu
Affiliation:
National Tsing Hua University Hsin-chu, Taiwan, R.O.C.
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Extract

Polycrystalline Si crystals grown by gas-assistedsolidification have been characterized by chemical and physical techniques with particular emphasis on carbon determination. The life time of this material appears to be not correlated with [0] or [C].

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 59: Symposium K – Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon , 1985 , 451
Copyright
Copyright © Materials Research Society 1986

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References

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