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Characterization of polycrystalline Si silicon sheet grown by die casting combined with the Bridgman technique

Published online by Cambridge University Press:  01 February 2011

K. Saito ,
T. Iida ,
D. Akimoto ,
A. Nose ,
Y. Takanashi ,
S. Sakuragi ,
H. Nanba ,
G. Sakuragi  and
T. Shimazaki
K. Saito
Affiliation:
Department of Materials Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda-shi, Chiba 278–8510, Japan
T. Iida
Affiliation:
Department of Materials Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda-shi, Chiba 278–8510, Japan
D. Akimoto
Affiliation:
Department of Materials Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda-shi, Chiba 278–8510, Japan
A. Nose
Affiliation:
Department of Materials Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda-shi, Chiba 278–8510, Japan
Y. Takanashi
Affiliation:
Department of Materials Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda-shi, Chiba 278–8510, Japan
S. Sakuragi
Affiliation:
Union Material Inc., 1640 Oshido-Jyoudai, Tone-Machi, Kitasouma, Ibaraki 300–1602, Japan
H. Nanba
Affiliation:
Union Material Inc., 1640 Oshido-Jyoudai, Tone-Machi, Kitasouma, Ibaraki 300–1602, Japan
G. Sakuragi
Affiliation:
Union Material Inc., 1640 Oshido-Jyoudai, Tone-Machi, Kitasouma, Ibaraki 300–1602, Japan
T. Shimazaki
Affiliation:
Union Material Inc., 1640 Oshido-Jyoudai, Tone-Machi, Kitasouma, Ibaraki 300–1602, Japan
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Abstract

Die-casting growth was used for manufacturing the multicrystalline silicon sheet with a size of 100 × 120 × 0.5 mm. During the growth, incorporation of contaminants such as iron, cobalt, nickel and chromium was well suppressed. The average etch-pit density values ranged from 1×104 cm-2 to 4x106 cm-2 for growth rates of 5 to 60 mm/h, respectively. Measurement of minority-carrier lifetime bye microwave-photoconductivity-decay (μ-PCD) method was 0.5 μs for as-grown specimens, suggesting that defects and residual strain exist in the grown sheet. Moreover, post heat treatment at 1473 K reduced the etch-pit density and improved carrier lifetime up to 2.2 μs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 836: Symposium L – Materials for Photovoltaics , 2004 , L5.45
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

1. Kalejs, P., Solid State Phenomena 95–96, 174 (2004).Google Scholar
2. Sakuragi, S., Shimasaki, T., Sakuragi, G., Nanba, H., Proc. of 19th European Photovoltaic Solar Energy Conf, Paris (2004) (to be published).Google Scholar
3. Saito, T., IEEE, 576–580, (1981).Google Scholar
4. Jeong, J. W., Rosenblum, M. D., Kalejs, J. P., Rohatgi, A., J. Appl. Phys 87, 7551 (2000).Google Scholar
5. Istratov, A. A., J. Appl. Phys. 94, 6552 (2003).Google Scholar
6. Kalejs, J. P., J. Crystal. Growth, 128, 298 (1993).Google Scholar
7. McHugo, S.A., Thompson, A.C., Lamble, G., MacDowell, A., Celestre, R., Padmore, H., Imaizumi, M., Yamaguchi, M., Perichaud, I., Martinuzzi, S., Werner, M., Rinio, M., Moller, H.J., Sopori, B., Hieslmair, H., Flink, C., Istratov, A., and Weber, E.R. in Applications of Synchrotron Radiation Techniques to Materials Science IV, edited By: Mini, S. M., Stock, S. R., Perry, D. L., and Terminelo, L. J., (Mater. Res. Soc. Symp. Proc. 524, Pittsburgh, PA, 1998) pp. 297–302.Google Scholar
8. Bailey, and Weber, E. R., Physica Status SolidiA, 137 pp. 515 (1993).Google Scholar
9. Kruger, O., Seifert, W., Kittler, M., Vyvenko, O. F., Physica Status Solidi, 222, 367 (2000).Google Scholar
10. McHugo, S. A., J. Appl. Phys, 89, 4282 (2001).Google Scholar
11. Werner, M., Moller, H. J., Wolf, E., Mater. Res. Soc. Symp. Proc. 469, 89 (1997).Google Scholar
12. Zhang, P., Vainola, H., Istratov, A. A., Weber, E. R., Appl. Phys. Lett., 83, 4324 (2003).Google Scholar