Hostname: page-component-78c5997874-t5tsf Total loading time: 0 Render date: 2024-11-03T00:39:03.404Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization of Plzt on Platinum Electrodes for High Density Fram Application

Published online by Cambridge University Press:  10 February 2011

YongSoo Choi ,
SooDoo Choe ,
SeungHyun Kim ,
ChangEun Kim  and
DooYoung Yang
YongSoo Choi
Affiliation:
Department of Ceramic Engineering, YonSei University, Seoul, Korea
SooDoo Choe
Affiliation:
Department of Ceramic Engineering, YonSei University, Seoul, Korea
SeungHyun Kim
Affiliation:
Department of Ceramic Engineering, YonSei University, Seoul, Korea
ChangEun Kim
Affiliation:
Department of Ceramic Engineering, YonSei University, Seoul, Korea
DooYoung Yang
Affiliation:
Advanced Technology R&D Lab., LG Semicon Co. Ltd., Cheongju‐si, Korea
Get access

Abstract

A new sol‐gel route to obtain PLZT thin film was developed by combining the advantage of 2‐methoxyethanol as a solvent and acetylacetone as a chelating agent. The sol maintained the same stable state as that of fresh synthesized sol even after 60 days of aging. The PLZT films spin coated onto a Pt/Ti/SiO2 substrate with 15% Pb excess and 7.5% La added sol showed well developed rosette microstructure of uniform grain sizes(0.3 ‐ 0.5 μm) and gave well behaved ferroelectric properties with the values of Ps, Pr, and Ec of 40 μC/cm2, 15 μ C/cm2, and 20 kV/cm respectively at 5V after 650 °C and above annealing. The degradation in polarization of 2.5% La doped PLZT thin film was found to be less than 20% up to 1012 cycles

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 446: Amorphous and Crystalline Insulating Thin Films–1996 , 1996 , 337
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Higuma, Y., Matsui, Y., Okuyama, M., Nakagawa, T., and Hareakawa, Y., “MFS‐FET”‐A new Type of Nonvolatile Memory Switch Using PLZT Film,” Proc. 9th Conf, Solid State Devices (1977).Google Scholar
2 Lee, J., Ramesh, R., and Keramidas, V.G., in Ferroelectric Thin Films IV. edited by Tutle, B.A., Desu, S.B., Ramesh, R., and Shiosaki, T., (Mater. Res. Soc. Symp. Proc. 361, Pittsburgh, PA, 1995), pp. 67.Google Scholar
3 Tagaki, T., Oizuki, I., Kobayashi, I. and Okada, M., Jpn. J. Appl. Phys., Vol. 34, 4104‐4107 (1995).Google Scholar
4 Lakeman, Charles. D. E., Campion, J. F., Payne, D. A., Ceramic Transactions Vol. 25, 413‐439 (1992).Google Scholar
5 Li, Shu, Condrate, R. A., Sr., and spriggs, R. M., Spectroscopie Letters, 21, 969‐980 (1988)Google Scholar
6 Lakeman, Charles D. E., Payne, David A., J. Am. Ceram. Soc, 75(11), 3091‐3096 (1992).Google Scholar
7 Beltram, T., Kosec, M., Stavber, S., Mat. Res. Bull., Vol. 28, 313‐320 (1993).Google Scholar
8 Yoo, I. K., Desu, S. B. and Xing, J., in Ferroelectric Thin Films III, edited by Myers, E. R., Turtle, B. A., Desu, S. S., (Mater. Res. Soc. Symp. Proc, 310, San Francisco, CA, 1993), pp165 Google Scholar
9 Chang, J. F., Desu, S. B., J. Mater. Res., 9(4), 955‐969 (1994)Google Scholar