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Characterization of Plasma-Enhanced Chemical Vapour Deposition of Silicon-Oxynitride

Published online by Cambridge University Press:  28 February 2011

W. G. M. Van Den Hoek
W. G. M. Van Den Hoek*
Affiliation:
Philips Research Laboratories, Signetics Corp., Sunnyvale, CA 94088–3409
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Abstract

The plasma-enhanced chemical vapour deposition (PECVD) of siliconoxynitride from silane, ammonia and nitrous oxide was studied using an ASM vertical parallel plate reactor.Films varying from PECVD oxide (refractive index no1.50) to PECVD nitride (n=2.00) were analyzed using ellipsometry, UV-visible reflection spectroscopy, Fourier-transform infrared transmission spectroscopy (FTIR), nuclear reaction analysis (NRA), Rutherford backscattering (RBS) and electron spectoscopy for chemical analysis (ESCA).Stress measurements were performed using a Fizeau interferometer.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 68: Symposium C – Plasma Processing , 1986 , 335
Copyright
Copyright © Materials Research Society 1986

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