Hostname: page-component-78c5997874-lj6df Total loading time: 0 Render date: 2024-11-19T06:06:39.938Z Has data issue: false hasContentIssue false

Characterization of PECVD SixOyNz:H Films and its Correlation to Device Performance and Reliability

Published online by Cambridge University Press:  22 February 2011

Mansour Moinpour
Affiliation:
Intel Corp., 2200 Bowers Ave., Santa Clara, California 94245
Ken Mack
Affiliation:
Intel Corp., 2200 Bowers Ave., Santa Clara, California 94245
Johnny Cham
Affiliation:
Intel Corp., 2200 Bowers Ave., Santa Clara, California 94245
Farhad Moghadam
Affiliation:
Intel Corp., 2200 Bowers Ave., Santa Clara, California 94245
Byron Williams
Affiliation:
Stanford University, Stanford, Ca. 94305
Get access

Abstract

For integrated circuits, the integrity and film quality of the final passivation layer plays an important role in the device performance and reliability. Hydrogenated amorphous silicon oxynitride (α-SixNyOz:H) films deposited by plasma enhanced chemical vapor deposition (PECVD) have been extensively used for final device passivation applications. In this paper, a detailed characterization of PECVD oxynitride process for 200 mm Si wafer processing is presented. Silicon oxynitride of various compositions were deposited by changing the amounts of silane, ammonia, nitrogen and nitrous oxide in the reactant gas stream. Ultraviolet/Visible (UV/VIS) spectroscopy, Fourier transform infrared (FTIR) spectroscopy, Rutherford backscattering spectrometry (RBS), and refractive index measurements were used to examine the variation in physical, optical and electrical properties. A correlation is observed between the oxynitride film composition, mainly N-H/Si-H ratio, and UV transmissivity (UV %T) which is of particular interest for memory applications. Effects of oxynitride film quality on e-test parameters and device performance are discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Brown, D. M., Gray, P. V., Heumann, F. K., Philipp, H. R., and Taft, E. A., J. Electrochem. Soc. 137, 311 (1968).Google Scholar
[2] Shams, Q. A. and Brown, W. D., J. Electrochem. Soc. 137, 1244 (1990).Google Scholar
[3] Hao, Ming-yin and Lee, Jack C., Appl. Phys. Lett. 60, 445 (1992).Google Scholar
[4] Kapoor, V. J., Bailey, R. S. and Smith, S. R., J. Vac. Sci. Tech., 18, 305 (1981).Google Scholar
[5] Osenbach, J. W. and Knolle, W. R., J. Electrochem. Soc. 139, 3346 (1992).Google Scholar
[6] Nguyen, V. S., Landford, W. A., and Rieger, A. L., J. Electrochem. Soc. 133, 970 (1986).Google Scholar
[7] Nguyen, V. S., Burton, S., and Pan, P., J. Electrochem. Soc. 131, 2348 (1984).Google Scholar
[8] Takasaki, K., Koyamo, K., and Takagi, M., Abstract 298, The 158th Meeting of the Electrochemical Society Extended Abstracts, Hollywood, FL, 80–2, 767 (Oct. 5-10, 1980).Google Scholar
[9] Vandekerckhove, E. and Maes, H. E., Abstract 369, The 170th Meeting of the Electrochemical Society Extended Abstracts, San Diego, CA, 86–2, 553 (Oct. 19-24, 1986).Google Scholar
[10] Adler, David, Fritzsche, Hellumt, Ovinsky, Stanford R. and Mott, N. F., Physics of Disordered Materials, Plenum Press, New York, NY. 1985, p. 305.Google Scholar
[11] Muller, Richard S. and Kamins, Theodore I., Device Electronics for Integrated Circuits, John Wiley & Sons, New York, NY. 1986, p. 54.Google Scholar
[12] Cox, J. N., Friedrich, L. B., Heath, L. L., and Sun, B. L., J. Vac. Sci. Tech., B 7, 429 (1989).Google Scholar
[13] Cox, J. N., Private Communication.Google Scholar