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Characterization of Oxides and Thin Films

Published online by Cambridge University Press:  21 February 2011

Iain D. Baikie  and
Gerrit H. Bruggink
Iain D. Baikie
Affiliation:
Department of Applied Physics, The Robert Gordon University, St. Andrew's Street, Aberdeen AB1 1HG, United Kingdom
Gerrit H. Bruggink
Affiliation:
Department of Applied Physics, The Robert Gordon University, St. Andrew's Street, Aberdeen AB1 1HG, United Kingdom
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Abstract

Using a new, high resolution, microscopic Scanning Kelvin Probe (SKP), work function topographies of metal, semiconductor and metal/semionductor surfaces have been studied in both Ultra-High-Vacuum (UHV) and air environments.

The work function is a very sensitive indicator of surface and Interface condition and has been previously utilized to examine preparation methods, surface roughness, adsorption processes, thin film monitoring and residual surface contamination.

Extension of the basic method, via Illumination of the semiconductor surface under the tip allows one to probe the local density of states (LDOS). Variations in LDOS can be used to monitor metal contamination, interface traps, bulk contamination, oxide imperfections, etc.

Work function topographies generated in this fashion have application in quality control at all stages of the manufacturing process. The Kelvin method of measuring work function is non-contact and non-destructive, utilizing neither high fields nor large currents. It can be applied to a variety of environments ranging from UHV to air and at a wide range of temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 309: Symposium M2 – Materials Reliability in Microelectronics III , 1993 , 35
Copyright
Copyright © Materials Research Society 1993

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References

1. Thomson, W., later Lord Kelvin, Phil. Mag. 46, 82 (1898).Google Scholar
2. Zisman, W.A., Rev. Sci. Instrum. 3, 267 (1932).Google Scholar
3. Baikie, I.D., Werf, K.O. van der, Oerbekke, H., Broeze, J. and Silfhout, A. van, Rev. Sci. Instrum. 60, 930 (1989).Google Scholar
4. Baikie, I.D., Werf, K.O van der and Hanekap, L.J, Rev. Sci. Instrum. 59, 2075 (1988).Google Scholar
5. Baikie, I.D., Mackenzie, S., Estrup, P.J.Z. and Meyer, J.A., Rev. Sci. Instrum. 62, 1326 (1991).Google Scholar
6. Baikie, I.D. and Venderbosch, E. in Photo-Induced Space Charge Effects in Semiconductors, edited by Nolte, D.D, Haegel, N.M. and Goosen, K.W. (Mater. Res. Soc. Proc. 261, Pittsburgh, PA, 1992) pp. 149–154.Google Scholar
7. Baikie, I.D. in Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing, edited by Nemanich, R.J, Helms, C.R., Hirose, M and Rubloff, G.W. (Mater. Res. Soc. Proc. 259, Pittsburgh, PA 1992), pp. 149–153.Google Scholar
8. Baikie, I.D. in Chemical Perspectives of Microelectronic Materials, edited by Interrante, L.V., Jensen, K.F., Dubois, L.H. and Gross, M.E. (Mater. Res. Soc. Proc. 204, Pittsburgh, PA 1991) pp. 363–368.Google Scholar
9. Baikie, I.D., Ph.D. Thesis, University of Twente, 1988.Google Scholar
10. Baikie, I.D., Venderbosch, E., Meyer, J.A. and Estrup, P.J.Z., Rev. Sci. Instrum. 62, 725 (1991).Google Scholar
11. Nonnenmacher, N., O'Boyle, M. and Wickramamasinghe, H.K., Ultramicroscopy 42, 268 (1991).Google Scholar