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Characterization of OMVPE-Grown AlGaInN Heterostructures

Published online by Cambridge University Press:  10 February 2011

D. P. Bour ,
H. F. Chung ,
W. Götz ,
L. Romano ,
B. S. Krusor ,
D. Hofstetter ,
S. Rudaz ,
C. P. Kuo ,
F. A. Ponce  and
N. M. Johnson
...Show all authors
D. P. Bour
Affiliation:
XEROX Palo Alto Research Center, Electronic Materials Laboratory, 3333 Coyote Hill Road, Palo Alto, CA 94304, [email protected]
H. F. Chung
Affiliation:
XEROX Palo Alto Research Center, Electronic Materials Laboratory, 3333 Coyote Hill Road, Palo Alto, CA 94304, [email protected]
W. Götz
Affiliation:
Hewlett-Packard Optoelectronics Divison, 370 West Trimble Road, San Jose, CA 95131
L. Romano
Affiliation:
XEROX Palo Alto Research Center, Electronic Materials Laboratory, 3333 Coyote Hill Road, Palo Alto, CA 94304, [email protected]
B. S. Krusor
Affiliation:
XEROX Palo Alto Research Center, Electronic Materials Laboratory, 3333 Coyote Hill Road, Palo Alto, CA 94304, [email protected]
D. Hofstetter
Affiliation:
XEROX Palo Alto Research Center, Electronic Materials Laboratory, 3333 Coyote Hill Road, Palo Alto, CA 94304, [email protected]
S. Rudaz
Affiliation:
Hewlett-Packard Optoelectronics Divison, 370 West Trimble Road, San Jose, CA 95131
C. P. Kuo
Affiliation:
Hewlett-Packard Optoelectronics Divison, 370 West Trimble Road, San Jose, CA 95131
F. A. Ponce
Affiliation:
XEROX Palo Alto Research Center, Electronic Materials Laboratory, 3333 Coyote Hill Road, Palo Alto, CA 94304, [email protected]
N. M. Johnson
Affiliation:
XEROX Palo Alto Research Center, Electronic Materials Laboratory, 3333 Coyote Hill Road, Palo Alto, CA 94304, [email protected]
M. G. Craford
Affiliation:
Hewlett-Packard Optoelectronics Divison, 370 West Trimble Road, San Jose, CA 95131
R. D. Bringans
Affiliation:
XEROX Palo Alto Research Center, Electronic Materials Laboratory, 3333 Coyote Hill Road, Palo Alto, CA 94304, [email protected]
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Abstract

We report on the OMVPE growth and characterization of AlGalnN and its heterostructures, including measurements of electrical properties (Hall), optical properties (photo- and cathodo- luminescence), structural characteristics (x-ray diffraction and TEM); and also the emission of InGaN/AlGaN heterostructures subject to optical and electrical pumping.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 509
Copyright
Copyright © Materials Research Society 1997

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References

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