Hostname: page-component-78c5997874-j824f Total loading time: 0 Render date: 2024-11-03T00:42:19.796Z Has data issue: false hasContentIssue false

Characterization of New SBT Sol System and its thin film on the Platinum Electrode for Fram Application

Published online by Cambridge University Press:  10 February 2011

YongSoo Choi
Affiliation:
Department of Ceramic Engineering, YonSei University, Seoul, 120-749, Korea
WooSik Kim
Affiliation:
Department of Ceramic Engineering, YonSei University, Seoul, 120-749, Korea
ChangEun Kim
Affiliation:
Department of Ceramic Engineering, YonSei University, Seoul, 120-749, Korea
WhanSik Yoo
Affiliation:
Department of Material engineering, University of Inchon, Inchon, 402-749, Korea
BaeYeon Kim
Affiliation:
Department of Material engineering, University of Inchon, Inchon, 402-749, Korea
HanSang Song
Affiliation:
Semiconductor research division, Hyundai Electronics Industries Co., Ltd, Korea
Get access

Abstract

Stable SBT sols for FRAM application were made from Sr-isopropoxide, Bi-acetate, and Ta-ethoxide with 2-ethoxyethanol as a solvent and chelating agent, TEA. The sol were spin-on coated on the Pt /Ti/SiO2/Si substrate. From the IR and DTA/TGA, the 2-ethoxyethanol -triethanolamine sol system is quite stable against aging. 5% excess Bi added sol and 800°C heat treatment of the thin film revealed the most crystallinity. There is a change in the orientation of thin film above 800°C heat treatment from c-axis to(105). The average grain size of thin film is very small, i.e., 40 nm at 800°C, and it has very narrow distributions, and the thickness of the coating were about 100nm, which would promise smaller electrode area and higher yield.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Scott, J. F. and Paz de Araujo, C. A., Science 246, p. 1400(1989)Google Scholar
2. Warren, W. L., Dimos, D. B., Tuttle, C. A., Nasby, R. D., and Pike, G. E., Appl. Phys. Lett, 65, p. 1018(1991)Google Scholar
3. Yoo, I. K. and Desu, S. B., Phys. Status Solidi (a), p. 565(1992)Google Scholar
4. Evans, J. and Womack, R., IEEE J. Solid State Circ. SSC–23, p. 1171(1988)Google Scholar
5. Mihara, T., Watanabe, H. and Paz de Araujo, C. A., Jpn. J. Appl. Phys. 33, p. 5281(1994)Google Scholar
6. Amanuma, K., Hase, T., and Miyasaka, Y.. Appl. Phys. Lett. 66(2), p. 221(1995)Google Scholar
7. Al-Shareef, H. N., Dimos, D., Boyle, T. J., Warres, W. L., and Tuttle, B. A., Appl. Phys. Lett. 68, p. 690(1996)Google Scholar
8. Dat, R., Lee, J. K., Auciello, O. and Kingon, A. I., Appl. Phys. Lett. 67, p. 572(1995)Google Scholar
9. Chen, S. Y., Du, X. F., and Chen, I. W. in Ferroelectric Thin Film TV. edited by Tuttle, B. A., Desu, S. B., Ramesh, R., Shiosaki, T. (Mat. Res. Soc. Sym. Proc. 361, Pittsburgh, PA 1995), p. 15 Google Scholar
10. Noguchi, T., Hase, T. and Miyasaka, Y., Jpn. J. Appl. Phys. Vol. 35, pp. 4900–1904 (1996)Google Scholar
11. Ichinose, N. and Watanabe, M., Jpn. J. Appl. Phys. Vol. 36, p.5893(1997)Google Scholar