Hostname: page-component-586b7cd67f-gb8f7 Total loading time: 0 Render date: 2024-11-29T07:33:02.302Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization of Near-Edge-Optical Transitions in Undoped and Doped GaN/Sapphire Grown by MOVPE, HVPE, and GSMBE

Published online by Cambridge University Press:  10 February 2011

M. Leroux ,
B. Beaumont ,
N. Grandjean ,
J. Massies  and
P. Gibart
M. Leroux
Affiliation:
Centre de Recherches sur l’Hétéro-Epitaxie et ses Applications-CNRS, Rue B. Grégory, 06560 Valbonne (France), email: mleroux@crheal .unice.fr
B. Beaumont
Affiliation:
Centre de Recherches sur l’Hétéro-Epitaxie et ses Applications-CNRS, Rue B. Grégory, 06560 Valbonne (France), email: mleroux@crheal .unice.fr
N. Grandjean
Affiliation:
Centre de Recherches sur l’Hétéro-Epitaxie et ses Applications-CNRS, Rue B. Grégory, 06560 Valbonne (France), email: mleroux@crheal .unice.fr
J. Massies
Affiliation:
Centre de Recherches sur l’Hétéro-Epitaxie et ses Applications-CNRS, Rue B. Grégory, 06560 Valbonne (France), email: mleroux@crheal .unice.fr
P. Gibart
Affiliation:
Centre de Recherches sur l’Hétéro-Epitaxie et ses Applications-CNRS, Rue B. Grégory, 06560 Valbonne (France), email: mleroux@crheal .unice.fr
Get access

Abstract

We report a comparative study by luminescence and reflectivity of GaN grown on sapphire by MOVPE, HVPE and GSMBE. Whatever the growth technique, undoped GaN shows well resolved reflectivity spectra, allowing hetero-epitaxial strain to be taken into account in the interpretation of luminescence spectra. MOVPE provides the highest purity samples so far. From the luminescence study of n- and p-type doped samples, activation energies of 265 ± 10 meV and 34 ± 2 meV are deduced for Mg acceptors and Si donors respectively. From the luminescence spectra of HVPE grown samples, the presence of a perturbed interfacial n+ layer is evidenced.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 695
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H. and Sugimoto, Y., Japan. J. Appl. Phys. 35, L217 (1996).Google Scholar
2. Grandjean, N., Massies, J. and Leroux, M., Appl. Phys. Lett. 69, 2071 (1996).Google Scholar
3. Gil, B., Briot, O. and Aulombard, R.L., Phys. Rev. B 25, R17028 (1995).Google Scholar
4. Vennègues, P., Beaumont, B., Vaille, M. and Gibart, P., J. Cryst. Growth, to be published.Google Scholar
5. Leroux, M., Beaumont, B., Grandjean, N., Golivet, C., Gibart, P., Massies, J., Leymarie, J., Vasson, A. and Vasson, A.M., Mat. Sci. Eng. B in press.Google Scholar
6. Monemar, B., Phys. Rev. B 10, 676 (1974).Google Scholar
7. Volm, D., Oeftinger, K., Streibl, T., Kovalev, D., Ben-Chorin, M., Diener, J, Meyer, B.K., Majewski, J., Eckey, L., Hoffmann, A., Amano, H., Akasaki, I., Hiramatsu, K. and Detchprohm, D., Phys. Rev. B 53, 16543 (1996).Google Scholar
8. Dingle, R., Sell, D.D., Stokowski, S.E. and Ilegems, M., Phys. Rev. B 4, 1211 (1971).Google Scholar
9. Tchounkeu, M., Briot, O., Gil, B., Alexis, J.P. and Aulombard, R.L., J. Appl. Phys. 80, 5352 (1996).Google Scholar
10. Kovalev, D., Averboukh, B., Volm, D., Meyer, B.K., Amano, H. and Akasaki, I., Phys. Rev. B 54, 2518 (1996).Google Scholar
11. Beaumont, B. and Gibart, P., Semiconductor Heteroepitaxy, ed. by Gil, B. and Aulombard, R.L. (World Scientific, Singapore 1995), p 258 Google Scholar
12. Strite, S. and Morkoç, H., J. Vac. Sci. Technol. B 10, 1237 (1992).Google Scholar
13. Leroux, M., Beaumont, B., Grandjean, N., Gibart, P., Massies, J. and Faurie, J.P., MRS Internet J. Nitride Semicond. Res. 1, 25 (1996).Google Scholar
14. De-Sheng, J., Makita, Y., Ploog, K. and Queisser, H.J., J. Appl. Phys. 53, 999 (1982).Google Scholar
15. Beaumont, B., Vaille, M., Lorenzini, P., Gibart, P., Boufaden, T. and El Jani, B., MRS Internet J. Nitride Semicond. Res. 1, 17 (1996).Google Scholar
16. Gotz, W., Johnson, N.M., Walker, J., Bour, D.P. and Street, R.A., Appl. Phys. Lett. 68, 667 (1996).Google Scholar
17. Smith, M., Chen, G.D., Lin, J.Y., Jiang, H.X., Salvador, A., Sverdlov, B.N., Botchkarev, A., Morkoç, H. and Goldenberg, B., Appl. Phys. Lett. 68, 415 (1996).Google Scholar
18. Yu, Phil Won, J. Appl. Phys. 48, 5043 (1977).Google Scholar
19. Neugebauer, J., Proc. 1st European GaN Workshop (Rigi, Switzerland 1996) to be published.Google Scholar
20. Siegle, H., Thurian, P., Eckey, L., Thomsen, C., Meyer, B.K., Amano, H., Akasaki, I., Detchprohm, T. and Hiramatsu, K., Appl. Phys. Lett. 68, 1265 (1996).Google Scholar
21. Grandjean, N., Massies, J., Vennégues, P., Laügt, S. and Leroux, M., this volume.Google Scholar