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Characterization of Mis Capacitor of Bst Thin Films Deposited on Si by Rf Magnetron Sputtering

Published online by Cambridge University Press:  10 February 2011

S.H. Paek ,
C.S. Park ,
J.H. Won  and
K.S. Lee
S.H. Paek
Affiliation:
Dept. of Materials Engineering, Hanyang Univ., Seoul, 133–791, Korea
C.S. Park
Affiliation:
Dept. of Electronic Engineering, Hanseo Univ., Chung-Nam, 352–820, Korea
J.H. Won
Affiliation:
Dept. of Materials Engineering, Hanyang Univ., Seoul, 133–791, Korea
K.S. Lee
Affiliation:
Dept. of Materials Engineering, Hanyang Univ., Seoul, 133–791, Korea
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Abstract

The application of high dielectric (Ba, Sr)TiO3 [BST] thin films for Metal-Insulator- Semiconductor(MIS) capacitors was investigated. BST thin films were deposited on p-Si(100) substrates by the RF magnetron sputtering with temperature range of 500–600 °C. We examined the characteristics of MIS capacitor with various oxygen pressure, substrate temperature and (Ba+Sr)/Ti ratio. The dielectric properties of MIS capacitors consisting of AI/BST/SiO2/Si sandwich structure were measured for various conditions. The charge state densities of the MIS capacitors were determined by high frequency (1 MHz) C-V measurement. Also, current-voltage characteristics of the MIS capacitor were investigated. In order to reduce the leakage current in MIS capacitor, high quality SiO2 layer was grown on bare p-Si substrate by thermal oxidation. By applying SiO2 layer between BST thin films and Si substrate, low leakage current of 10−10 order was observed. Futhermore, the leakage current showed the dependence on the oxygen concentration in plasma gas and the (Ba+Sr)/Ti ratio. Also, the BST MIS structure showed relatively high capacitance even though it is the combination of high-dielectric BST thin films and SiO2 layer. By C-V measurement, the polarity of effective oxide charge changed with the oxygen concentration in plasma gas and (Ba+Sr)/Ti ratio of sputtering target.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 433: Symposium T – Ferroelectric Thin Films V , 1996 , 33
Copyright
Copyright © Materials Research Society 1996

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