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Characterization of Mbe GaAs Layers Grown at 200°C–300°C

Published online by Cambridge University Press:  28 February 2011

C.R. Wie ,
K. Xie ,
T.T. Bardin ,
J.G. Pronko ,
D.C. Look ,
K.R. Evans  and
C.E. Stutz
C.R. Wie
Affiliation:
State University of New York at Buffalo, Dept. of ECE, Bonner Hall, Buffalo, NY14260
K. Xie
Affiliation:
State University of New York at Buffalo, Dept. of ECE, Bonner Hall, Buffalo, NY14260
T.T. Bardin
Affiliation:
Lockheed Palo Alto Research Laboratory, Palo Alto, CA94304
J.G. Pronko
Affiliation:
Lockheed Palo Alto Research Laboratory, Palo Alto, CA94304
D.C. Look
Affiliation:
Wright State University, Dayton, 0H45435
K.R. Evans
Affiliation:
Wright-Patterson AFB, OH45433
C.E. Stutz
Affiliation:
Wright-Patterson AFB, OH45433
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Abstract

Lattice parameter, RBS channeling, and T-dependent Hall effect and resistivity are measured in 5 μm GaAs layers MBE-grown at 200°C, 250°C and 305°C, and subsequently annealed. Perpendicular lattice parameter was increased by 0.15% for 200 °C, 0.10% for 250°C, and 0.05% for 305°C sample. No parallel mismatch was observed. In annealing up to 800°C, most recovery of lattice parameter occured at 350°C-450°C. For samples annealed at 500° C − 600°C, the conductivity activation energy was higher in the furnace annealed sample than in the RTA-annealed sample, indicating possible depth nonuniformity in furnace annealed sample. The 600°C RTA annealed sample indicated a donor activation energy of 0.61 eV. A 600°C furnace annealed sample indicated the deep donor concentration of 1.5×1018 cm−3. Maximum mobility in the 500–600°C annealed sample was 3000–3500 cm2/Vs, limited by the neutral impurity scattering and polar optical phonon scattering.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 198: Symposium V – Epitaxial Heterostructures , 1990 , 383
Copyright
Copyright © Materials Research Society 1990

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References

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