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Characterization of Ion-Implanted SiO2 Properties Applicable to Laser Processing

Published online by Cambridge University Press:  15 February 2011

T. C. Teng ,
Y. Shiau ,
Y. S. Chen ,
C. Skinner ,
J. D. Peng  and
L. J. Palkuti
T. C. Teng
Affiliation:
National Semiconductor, Santa Clara, California
Y. Shiau
Affiliation:
National Semiconductor, Santa Clara, California
Y. S. Chen
Affiliation:
National Semiconductor, Santa Clara, California
C. Skinner
Affiliation:
National Semiconductor, Santa Clara, California
J. D. Peng
Affiliation:
Advanced Research and Applications Corp., Sunnyvale, California
L. J. Palkuti
Affiliation:
Advanced Research and Applications Corp., Sunnyvale, California
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Abstract

The use of an antireflection oxide film applicable to laser annealing process has been investigated. The optical properties of the antireflection oxide film are changed by ion implantation although the antireflection characteristics are similar to calculations based on nominal optical constants. Implantation annealing can be achieved at powers lower than predicted by calculations. Using the antireflection(AR) technique, n+-p junction diodes were fabricated. Reverse bias junction leakage is around 10-9 A/cm2 , comparable to those annealed thermally. Short channel MOS devices were also fabricated and indicated much better resistance to the short channel effect than those thermally annealed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1: Symposium – Laser and Electron-Beam Solid Interactions in Materials Processing , 1980 , 391
Copyright
Copyright © Materials Research Society 1981

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References

REFERENCES

1. Gat, A. et al. , Appl. Phys. Lett., 32, 276 (1978).Google Scholar
2. Palkuti, L. J. et al. , Proceeding of 1980 IEEE Electronic Components Conference San Francisco, California April, 1980.Google Scholar
3. Teng, T. C., et al. , Electronics Letters, 16, 477 (1980).Google Scholar
4. Peng, J. D., et al. , IEEE Device Research Conference Ithaca, New York 1980.Google Scholar
5. Hill, C., Proceeding of the Symposium on Laser and Electron Beam Processing of Electronic Materials, Electrochemical Society, PV 80–1, p. 26.Google Scholar
6. Boroffka, H. et al. , ibid., p. 178.Google Scholar
7. Teng, T. C. et al. , Extended Abstracts of Electrochemical Society Meeting, Hollywood, Florida, Volume 80–2, p. 1086.Google Scholar