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Characterization of Interfacial Roughness in Semiconductor Heterostructures by X-Ray Reflectivity
Published online by Cambridge University Press: 25 February 2011
Abstract
The reflection of monochromatic x-rays by a layered heterostructure can be utilized as a nondestructive probe to obtain information on the interfacial roughness in the material. Interference between x-rays reflected from the top surface and the interfaces can give rise to pronounced oscillations in the reflectivity as a function of the grazing incidence angle. We have made use of this technique to investigate the interfacial roughness in semiconductor heterostructures grown by molecular beam epitaxy.
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- Copyright © Materials Research Society 1988