Hostname: page-component-669899f699-tzmfd Total loading time: 0 Render date: 2025-04-29T11:41:17.317Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization of Heavy Metal Contamination in Diamond Films Using Sims, Txrf, and RBS

Published online by Cambridge University Press:  26 February 2011

R. S. Hockett  and
James Knowles
R. S. Hockett
Affiliation:
Charles Evans & Associates, 301 Chesapeake Drive, Redwood City, CA 94063
James Knowles
Affiliation:
Crystallume, Inc., 125 Constitution Drive, Menlo Park, CA 94025
Get access

Abstract

Intentionally contaminated DC and microwave plasma deposited diamond films were used to evaluate the characterization capability of SIMS, TXRF and RBS for heavy metal measurements. The results showed SIMS is the preferred analytical technique for heavy metal impurities in the diamond films, and TXRF for the top surface analysis of the substrate and pre-processed substrate. In addition TXRF may provide a quick, non-destructive qualitative characterization of the diamond film surface and bulk. The RBS can provide qualitative and quantitative information if the impurity levels are high enough (above 1013 atoms/cm2).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 162: Symposium F – Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors , 1989 , 261
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Eichinger, P., Rath, H. J., and Schwenke, H., “Application of Total Reflection X-Ray Fluorescence Analysis for Metallic Trace Impurities on Silicon Wafer Surfaces,” Semiconductor Fabrication: Technology and Metrology, ASTM STP 990, edited by Gupta, Dinesh C., American Society for Testing and Materials, 1989.Google Scholar
2. Berneike, W., Knoth, J., Schwenke, H. and Weisbrod, U., Fresenius, Z. Anal. Chem. 333, 524 (1989).Google Scholar
3. Penka, V. and Hub, W., Spectrochimica Acta. 44B, 483 (1989).Google Scholar
4. Hockett, R. S., “Process Development and Control Using Total Reflection XRay Fluorescence (TXRF) for Surface Analysis,” Proceedings of the SPIE Symposium on Microelectronic Integrated Processing: Growth, Monitoring, and Control, Santa Clara, CA, October 8–13, 1989.Google Scholar