Hostname: page-component-78c5997874-t5tsf Total loading time: 0 Render date: 2024-11-19T09:32:34.110Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization of Growth Defects in ZnTe Single Crystals

Published online by Cambridge University Press:  21 February 2011

W. Zhou ,
J. Wu ,
M. Dudley ,
C.H. Su ,
M.P. Volz ,
D.C. Gillies ,
F.R. Szofran  and
S.L. Lehoczky
W. Zhou
Affiliation:
State University of New York at Stony Brook, Department of Materials Science and Engineering, Stony Brook, NY11794
J. Wu
Affiliation:
State University of New York at Stony Brook, Department of Materials Science and Engineering, Stony Brook, NY11794
M. Dudley
Affiliation:
State University of New York at Stony Brook, Department of Materials Science and Engineering, Stony Brook, NY11794
C.H. Su
Affiliation:
NASA, Marshall Space Flight Center, Huntsville, AL35812
M.P. Volz
Affiliation:
NASA, Marshall Space Flight Center, Huntsville, AL35812
D.C. Gillies
Affiliation:
NASA, Marshall Space Flight Center, Huntsville, AL35812
F.R. Szofran
Affiliation:
NASA, Marshall Space Flight Center, Huntsville, AL35812
S.L. Lehoczky
Affiliation:
NASA, Marshall Space Flight Center, Huntsville, AL35812
Get access

Abstract

(111) wafers sliced from a boule of ZnTe grown by horizontal physical vapor transport (PVT) have been characterized using synchrotron white beam X-ray topography. The growth axis was about 6° off [311]. The presence of dislocation slip bands, subgrain structures and [111] axis 180° rotational twins were revealed. The slip bands were observed to break up the ordered dislocation cell structures comprising the subgrain boundaries. The initiation of slip at regions of stress concentration at the junctions of subgrain boundaries and twin boundaries was observed. The asymmetric distribution of slip bands either side of the twinned region of crystal suggests that twin boundaries can act as barriers for slip. Several types of detailed twin boundary configuration were determined from the topographs. Using a combination of white beam X-ray topography and Nomarski interference microscopy, the three dimensional shapes of the twin boundaries were determined. Approximate atomic structures at these boundaries are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 302: Symposium F – Semiconductors for Room-Temperature Radiation Detector Applications , 1993 , 451
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Triboulet, R. and Didier, G., J. Crystal Growth, 28, 29 (1975).Google Scholar
2. Taguchi, T., Fujita, S. and Inuishi, Y., J. Crystal Growth, 45, 204 (1978).Google Scholar
3. Crowder, B.L. and Hammer, W.N., Phys. Rev., 150, 541 (1966).Google Scholar
4. Su, Ching-Hua, Lehoczky, S.L. and Szofran, F.R., J. Crystal Growth, 101, 221 (1990).Google Scholar
5. Kohn, J.A., The American Mineralogist, 43, 263 (1958).Google Scholar
6. Ellis, W.C. and Treuting, R.G., J. Metals, 3, 53 (1951).Google Scholar
7. Tohno, Shun-ichi and Katsui, Akinori, J. Crystal Growth, 74, 362 (1986).CrossRefGoogle Scholar
8. Wolf, K., Worz, M., Wagner, H.P., Kuhn, W., Naumov, A. and Gebhardt, W., J. Crystal Growth, 126, 643 (1993).Google Scholar