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Characterization of Growth Defects in CdZnTe Single Crystals by Synchrotron White Beam X-ray Topography

Published online by Cambridge University Press:  26 February 2011

H. Chung ,
B. Raghothamachar ,
J. Wu ,
M. Dudley ,
D. J. Larson Jr.  and
D. C. Gillies
H. Chung
Affiliation:
Dept. of Materials Science & Engineering, SUNY at Stony Brook, NY 11794–2275.
B. Raghothamachar
Affiliation:
Dept. of Materials Science & Engineering, SUNY at Stony Brook, NY 11794–2275.
J. Wu
Affiliation:
Dept. of Materials Science & Engineering, SUNY at Stony Brook, NY 11794–2275.
M. Dudley
Affiliation:
Dept. of Materials Science & Engineering, SUNY at Stony Brook, NY 11794–2275.
D. J. Larson Jr.
Affiliation:
Northrop Grumman Research & Development, Bethpage, NY 11714
D. C. Gillies
Affiliation:
NASA, Marshall Space Flight Center, Huntsville, AL 35812.
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Abstract

Synchrotron white beam X-ray topography has been used to characterize structural defects in microgravity grown CdZnTe single crystals. Defects such as dislocations, slip bands, 180° rotation twins, precipitates and subgrain boundaries are observed but their density is much lower than those in crystals grown under normal gravity. The observed results also indicate that the defect structures of the as grown crystals are strongly influenced by cooling rates. X-ray transmission topographs recorded from regions grown at different cooling rates show that the dislocation density in rapidly cooled regions is higher than that in slowly cooled regions. The formation of dislocations is presumably attributed to the thermal stress caused by accelerated cooling rates, which is greater than the critical resolved shear stress. As the cooling rate is accelerated, the magnitude of thermal stress is increased and more dislocations are formed to relieve the accumulated lattice strain. In addition, if the cooling rates are increased further, the accentuated thermal stresses can give rise to more pronounced deformation processes, comprising the formation of dislocation slip bands, as confirmed by the extensive slip bands revealed by the X-ray reflection topographs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 41
Copyright
Copyright © Materials Research Society 1995

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