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Characterization of Grain Boundaries in Polycrystalline GaAs
Published online by Cambridge University Press: 15 February 2011
Abstract
Examination of capacitance transients arising from the emission or capture of electrons at a charged GaAs grain boundary reveal for the first time the existence of discrete interface levels. The position of these levels in the bandgap and their associated capture cross sections are determined from the transients.
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- Research Article
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- Copyright © Materials Research Society 1982
References
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