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Characterization of Ge and C Implanted Sil-xGex and Sil-y-zGeyCz Layers

Published online by Cambridge University Press:  25 February 2011

Ashawant Gupta ,
Yao-Wu Cheng ,
Jianmin Qiao ,
M. Mahmudur Rahman ,
Cary Y. Yang ,
Seongil Im ,
Nathan W. Cheung  and
Paul K.L. Yu
Ashawant Gupta
Affiliation:
Microelectronics Laboratory, Santa Clara University, Santa Clara, CA 95053
Yao-Wu Cheng
Affiliation:
Microelectronics Laboratory, Santa Clara University, Santa Clara, CA 95053
Jianmin Qiao
Affiliation:
Microelectronics Laboratory, Santa Clara University, Santa Clara, CA 95053
M. Mahmudur Rahman
Affiliation:
Microelectronics Laboratory, Santa Clara University, Santa Clara, CA 95053
Cary Y. Yang
Affiliation:
Microelectronics Laboratory, Santa Clara University, Santa Clara, CA 95053
Seongil Im
Affiliation:
Department of Electrical Engineering and Computer Sciences.University of California, Berkeley, CA 94720
Nathan W. Cheung
Affiliation:
Department of Electrical Engineering and Computer Sciences.University of California, Berkeley, CA 94720
Paul K.L. Yu
Affiliation:
Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, CA 92093
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Abstract

In an attempt to substantiate our previous findings of boron deactivation and/or donor complex formation due to high-dose Ge and C implantation, SiGe and SiGeC layers were fabricated and characterized. Cross-sectional transmission electron microscopy indicated that the SiGe layer with peak Ge concentration of 5 at% was strained; whereas, for higher concentrations, stacking faults were observed from the surface to the projected range of Ge as a result of strain relaxation. Results of spreading resistance profiling were found to be consistent with the model of dopant deactivation due to Ge implantation and subsequent solid phase epitaxial growth of the amorphous layer. Furthermore, for unstrained SiGe layers (Ge peak concentration ≥7 at%), formation of donor complexes is indicated. Preliminary photoluminescence results correlate with the spreading resistance profiling results and indicate shallow donor complex formation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 298: Symposium B – Silicon-Based Optoelectronic Materials , 1993 , 135
Copyright
Copyright © Materials Research Society 1993

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References

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