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Characterization of GaAs-InAs Heterostructures by Micro-Raman Spectroscopy

Published online by Cambridge University Press:  25 February 2011

Masaya Ichimura ,
Yukihisa Moriguchi ,
Akira Usami ,
Takao Wada ,
Masao Tabuchi  and
Akio Sasaki
Masaya Ichimura
Affiliation:
Department of Electrical & Computer Engineering, Nagoya Institute of Technology, Nagoya 466, Japan
Yukihisa Moriguchi
Affiliation:
Department of Electrical & Computer Engineering, Nagoya Institute of Technology, Nagoya 466, Japan
Akira Usami
Affiliation:
Department of Electrical & Computer Engineering, Nagoya Institute of Technology, Nagoya 466, Japan
Takao Wada
Affiliation:
Department of Electrical & Computer Engineering, Nagoya Institute of Technology, Nagoya 466, Japan
Masao Tabuchi
Affiliation:
Department of Electrical & Computer Engineering, Nagoya Institute of Technology, Nagoya 466, Japan
Akio Sasaki
Affiliation:
Department of Electrical Engineering, Kyoto University, Kyoto 606, Japan
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Abstract

A GaAs/InAs heterostructure was characterized by micro-Raman spectroscopy. A 2 μm thick GaAs layer was grown on an (100) InAs substrate by molecular beam epitaxy. The sample was then angle-lapped so that the interface region is exposed on the bevel. At the close vicinity of the interface, GaAs longitudinal-optic (LO) frequency was lower by about 3 cm−1 than at the asgrown surface. The LO shift decreased with increasing distance from the interface. The spectral width did not strongly depend on the position, and thus the shift would be mainly due to strain. A similar experiment was carried out for an InAs/GaAs structure, and a broad peak which was tentatively assigned to the plasmon-LO coupled mode was observed for the InAs layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 221: Symposium C – Heteroepitaxy of Dissimilar Materials , 1991 , 465
Copyright
Copyright © Materials Research Society 1991

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References

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