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Characterization of GaAs Surfaces Subjected to A Cl2/Ar High Density Plasma Etching Process

Published online by Cambridge University Press:  03 September 2012

C.R. Eddy JR. ,
O.J. Glembocki ,
V.A. Shamamian ,
D. Leonhardt ,
R.T. Holm ,
J.E. Butler ,
B.D. Thoms ,
S.W. Pang ,
K.K. Ko  and
E.W. Berg
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C.R. Eddy JR.
Affiliation:
U.S. Naval Research Laboratory, 4555 Overlook Ave., SW, Washington, DC 20375-5345 [email protected]
O.J. Glembocki
Affiliation:
U.S. Naval Research Laboratory, 4555 Overlook Ave., SW, Washington, DC 20375-5345
V.A. Shamamian
Affiliation:
U.S. Naval Research Laboratory, 4555 Overlook Ave., SW, Washington, DC 20375-5345
D. Leonhardt
Affiliation:
U.S. Naval Research Laboratory, 4555 Overlook Ave., SW, Washington, DC 20375-5345 NRC Postdoctoral Fellow
R.T. Holm
Affiliation:
U.S. Naval Research Laboratory, 4555 Overlook Ave., SW, Washington, DC 20375-5345
J.E. Butler
Affiliation:
U.S. Naval Research Laboratory, 4555 Overlook Ave., SW, Washington, DC 20375-5345
B.D. Thoms
Affiliation:
Dept. of Physics and Astronomy, Georgia State University, Atlanta, GA 30303
S.W. Pang
Affiliation:
University of Michigan, EECS Bldg., Ann Arbor, MI 48109-2122
K.K. Ko
Affiliation:
University of Michigan, EECS Bldg., Ann Arbor, MI 48109-2122
E.W. Berg
Affiliation:
University of Michigan, EECS Bldg., Ann Arbor, MI 48109-2122
C.E. Stutz
Affiliation:
Wright Patterson Laboratories, Dayton, OH 45433
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Abstract

High density plasma etching of III-V compound semiconductors is critically important to the development of advanced optoelectronic and high frequency devices. Unfortunately, the surface chemistry of these processes is not well understood. In an effort to monitor surface processes and their dependence on process conditions in a realistic etching environment, we have applied mass spectroscopic techniques for the study of GaAs etching in Cl2/Ar chemistry. Etch product chlorides were monitored, together with optical measurement of the surface temperature by diffuse reflectance spectroscopy, as pressure (neutral flux), microwave power (ion flux) and rf bias of the substrate (ion energy) were varied. Observations from the spectroscopic techniques were correlated with ex situ surface damage assessments of unpassivated surfaces by photoreflectance spectroscopy. As a result, insights are made into regions of process conditions that are well suited to anisotropic, low damage etching.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 448: Symposium M – Control of Semiconductor Surfaces and Interfaces , 1996 , 33
Copyright
Copyright © Materials Research Society 1997

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References

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