Hostname: page-component-7b9c58cd5d-v2ckm Total loading time: 0 Render date: 2025-03-15T13:35:09.862Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization of Ferroelectric Thin Film PLZT(9/65/35) on R-Plane Sapphire

Published online by Cambridge University Press:  16 February 2011

S. Krishnakumar ,
S.C. Esener ,
C. Fan ,
V.H. Ozguz ,
M.A. Title ,
C. Cozzolino  and
S.H. Lee
S. Krishnakumar
Affiliation:
Department of Electrical and Computer Engineering, R-007, University of California, San Diego, La Jolla, CA 92037
S.C. Esener
Affiliation:
Department of Electrical and Computer Engineering, R-007, University of California, San Diego, La Jolla, CA 92037
C. Fan
Affiliation:
Department of Electrical and Computer Engineering, R-007, University of California, San Diego, La Jolla, CA 92037
V.H. Ozguz
Affiliation:
Department of Electrical and Computer Engineering, R-007, University of California, San Diego, La Jolla, CA 92037
M.A. Title
Affiliation:
Department of Electrical and Computer Engineering, R-007, University of California, San Diego, La Jolla, CA 92037
C. Cozzolino
Affiliation:
Department of Electrical and Computer Engineering, R-007, University of California, San Diego, La Jolla, CA 92037
S.H. Lee
Affiliation:
Department of Electrical and Computer Engineering, R-007, University of California, San Diego, La Jolla, CA 92037
Get access

Abstract

The deposition of ferroelectric PLZT on r-plane sapphire using R-F Triode Magnetron Sputtering is reported. R-plane (1102) sapphire is chosen, in spite of its large lattice mismatch to PLZT, because of its capability of integrating MOS silicon circuits with PLZT modulators. Perovskite PLZT films with the desired composition (9/65/35) are obtained using co-deposition techniques around 500°C and post deposition annealing at 650°C. The deposited films exhibit good optical and electro-optical properties. The room temperature dielectric constant of the films was 1800 at 10 Khz. The refractive index of the films was in the range 2.2–2.5. The films showed a quadratic E-O effect with R=0.6×10−16 m2/V2. The films are promising for smart Spatial Light Modulators (SLM) applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 200: Symposium Y – Ferroelectric Thin Films I , 1990 , 91
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Kiamilev, F et al. Opt. Eng. 28, 396 (1989)Google Scholar
2. Filby, J. D. and Nielsen, S., British J. Appl. Phys., 18, 1357 (1967)Google Scholar
3. Haertling, G. H. and Land, C. E. J. Am. Ceram. Soc., 54, 1 (1971)Google Scholar
4. Wang, J.H. et al.., Proc. Materials Research Society 1987 Fall Meeting, 100, 675 (1988)Google Scholar
5. Matsunami, H., et al.., Japan J. Appl. Phys., 15, 1163 (1976)Google Scholar
6. Ishida, M., Matsunami, H. and Tanaka, T., J. Appl. Phys., 15, (3), 951 (1977)Google Scholar
7. Tanaka, K., et al.., Japan J. Appl. Phys., 15, 1381 (1976)Google Scholar
8. Higuma, Y., et al.., Japan J. Appl. Phys., 16, 1707 (1977)Google Scholar
9. Adachi, H., et al.., J. Appl. Phys., 60, (2) 736 (1986)Google Scholar
10. Adachi, H., et al.., Japan J. Appl. Phys., 22, Supplement 22–2 11 (1983)Google Scholar
11. Mukherjee, A., Brueck, S. R. J. and Wu, A. Y., Optics Lett., 15, (3) 151 (1990)Google Scholar
12. Nakagawa, T., et al.., Japan J. Appl. Phys., 18, (5), 897 (1979)Google Scholar