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Characterization of Epitaxial Growth of Semiconducting Rhenium “Disilicide” Films

Published online by Cambridge University Press:  15 February 2011

A. Misra ,
M. Verdier ,
J.E. Mahan  and
T.E. Mitchell
A. Misra
Affiliation:
Department of Electrical Engineering, Colorado State University, Fort Collins, Colorado 80523
M. Verdier
Affiliation:
Department of Electrical Engineering, Colorado State University, Fort Collins, Colorado 80523
J.E. Mahan
Affiliation:
Materials Science and Technology Division, MS G755, Los Alamos National Laboratory, Los Alamos, NM 87545
T.E. Mitchell
Affiliation:
Department of Electrical Engineering, Colorado State University, Fort Collins, Colorado 80523
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Abstract

We have characterized, through transmission electron microscopy (TEM), the ReSi2−x thin films grown by reactive deposition on (001) Si. ReSi2−x thin films exhibit a distorted body-centered tetragonal MoSi2-type structure, and have excellent epitaxy on (001) Si since the face diagonal of the Si unit cell is equal to the c lattice parameter of silicide. The Si-deficient composition in the “disilicide” may be accommodated by collapse and shear of missing Si planes to form planar faults. Kirkendall voids are also observed at the film-substrate interface. The engineering of the defect and interface structures of these complex, non-stoichiometric silicides for optimized optoelectronic properties are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 580: Symposium E – Nucleation & Growth Processes in Materials , 1999 , 135
Copyright
Copyright © Materials Research Society 2000

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