Hostname: page-component-586b7cd67f-rdxmf Total loading time: 0 Render date: 2024-11-25T18:40:37.325Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization of Epitaxial CoSi2 Film Growth on Si(100) by Slow Positron Beam

Published online by Cambridge University Press:  03 September 2012

Ping Liu ,
Chenglu Lin ,
Zuyao Zhou ,
Huiming Weng ,
Bingzong Li ,
Rongdian Han  and
Shichang Zou
Ping Liu
Affiliation:
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050, China
Chenglu Lin
Affiliation:
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050, China
Zuyao Zhou
Affiliation:
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050, China
Huiming Weng
Affiliation:
Department of Modern Physics, University of Science and Technology of China, Hefei 230026, China
Bingzong Li
Affiliation:
Department of Electronic Engineering, Fudan University, Shanghai 200433, China
Rongdian Han
Affiliation:
Department of Modern Physics, University of Science and Technology of China, Hefei 230026, China
Shichang Zou
Affiliation:
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050, China
Get access

Abstract

A slow positron beam was used to investigate the solid state reaction of Co/Si and Co/Ti/Si. Variable-energy (0-20 keV) positrons were implanted into samples at different depths. The Doppler broadening of the annihilation -y-ray energy spectra, measured at a number of different incident positron energies were characterized a line-shape parameter “5”. It was found that the measured S parameters were sensitive to thin film reaction and crystalline characteristics. In particular, the S parameter of epitaxial CoSi2 formed by the ternary reaction was quit different from that of the polycrystalline CoSi2 formed by direct reaction of Co with Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 320: Symposium D – Silicides, Germanides, and Their Interfaces , 1993 , 233
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Ohshima, T., Nakamura, N., Nakagawa, K., Yamaguchi, K., and Miyao, M., 1991 IEDM Technical Digest, p.33.Google Scholar
2. Dass, M.L.A., Fraser, D.B., and Wei, C.S., Appl. Phys. Lett. 58, 308 (1991).CrossRefGoogle Scholar
3. Hsia, S.L., Tan, T.Y., Smith, P., and McGuire, G.E., J. Appl. Phys. 70, 7579 (1991).CrossRefGoogle Scholar
4. Vantomme, A., Nicolet, M.A., Bai, G., and Fraser, D.B., Appl. Phys. Lett. 62, 243 (1993).CrossRefGoogle Scholar
5. Liu, P., Li, B.Z., Sun, Z., Gu, Z.G., Huang, W.N., Jiang, G.B., Zhou, Z.Y., Ni, R.S., Lin, C.L., Zou, S.C., Hong, F., and Rozgonyi, G.A., J. Appl. Phys. 74, 1700 (1993).CrossRefGoogle Scholar
6. LI, B.Z., Sun, Z., Liu, P., Gu, Z.G., and Huang, W.N., in 10th International IEEE VLSI Multilevel Interconnectionn Conference, June, 1993.Google Scholar
7. Lynn, K.G., Chen, D.M., Nielsen, B., Paraja, R., and Myers, S., Phys. Rew. B34, 1949 (1986).Google Scholar
8. Corbel, C., Stucky, M., Hautojarvi, P., Saarinen, K., and Moser, P., Phys. Rew. B38, 8192 (1988).CrossRefGoogle Scholar
9. Lee, J.L., Wei, L., Tanigawa, S., and Kawabe, M., J. Appl. Phys. 68, 5571 (1990).CrossRefGoogle Scholar
10. Weng, H.W., Guo, X.Z., Han, R.D., Shi, X.J., Zhu, J.S., Zhao, T.X., and Wang, X.P., Nuclear Instruments and Methods in Physics Research, A307, 577 (1991).CrossRefGoogle Scholar
11. Tu, K.N., Mayer, J.W., and Feldman, L.C., Electronic Thin Film Science, Macmillan Publishing Company, 1992, Chapter 13.Google Scholar